Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Anthony St. Amour"'
Autor:
Tahir Ghani, Richard Purser, Jingyoo Choi, Mark Y. Liu, Chris Parker, Ashwin Ashok, Jun He, Sangwoo Pae, Karen Lemay, Paul A. Packan, Bruce Woolery, Ryan Lu, Anthony St. Amour, Seok-Hee Lee
Publikováno v:
2010 IEEE International Reliability Physics Symposium.
High-K (HK) and Metal-Gate (MG) transistor reliability is very challenging both from the standpoint of introduction of new materials and requirement of higher field of operation for higher performance. In this paper, key and unique HK+MG intrinsic tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52f59214a769955ea8a00bbac12330e9
https://doi.org/10.1109/irps.2010.5488814
https://doi.org/10.1109/irps.2010.5488814
Publikováno v:
Japanese Journal of Applied Physics. 33:2329
The photo- and electro-luminescence of strained Si1- x Ge x /Si heterostructures on Si(100) substrates from 77 K to 300 K has been investigated both experimentally and by quantitative modelling. The key experimental features are very broad linewidths
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::248d8753836ac147b6f102bf0090bd20
https://doi.org/10.1143/jjap.33.2329
https://doi.org/10.1143/jjap.33.2329