Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Anthony Schepis"'
Publikováno v:
SPIE Proceedings.
As EUV lithography attempts to outperform other lithographical methods to the sub-14 nm node, the demand for a larger NA traditionally dominates the drive for scaling. There are, however, many challenges to overcome in order to accomplish this [1]. D
Publikováno v:
SPIE Proceedings.
EUV lithography is likely more sensitive to drift from thermal and degradation effects than optical counterparts. We have developed an automated approach to photoresist image-based aberration metrology. The approach uses binary or phase mask targets
Autor:
Jassem Abdallah, Moutaz Fakhry, Melih Ozlem, Neal Lafferty, Joy Cheng, Daniel Brue, Topalogu Rasit Onur, Jed W. Pitera, Chi-Chun Liu, Daniel J. Dechene, Azalia A. Krasnoperova, Kafai Lai, Melia Tjio, Gregory S. Doerk, M. Guillorn, Hsinyu Tsai, Anthony Schepis
Publikováno v:
SPIE Proceedings.
We continue to study the feasibility of using Directed Self Assembly (DSA) in extending optical lithography for High Volume Manufacturing (HVM). We built test masks based on the mask datatprep flow we proposed in our prior year’s publication [1]. E
Publikováno v:
SPIE Proceedings.
Historically IC (integrated circuit) device scaling has bridged the gap between technology nodes. Device size reduction is enabled by increased pattern density, enhancing functionality and effectively reducing cost per chip. Exemplifying this trend a
Autor:
Ryoung-han Kim, Mark Somervell, Joy Cheng, Matthew E. Colburn, Chi-Chun Liu, Michael A. Guillorn, H. He, Derrick Liu, Nihar Mohanty, Michael Cicoria, David Hetzer, Anthony Schepis, Akiteru Ko, Cristina Estrada-Raygoza, Kafai Lai, Jason Cantone, Melia Tjio, Sylvie Mignot, Vinayak Rastogi, Robin Chao, Hsinyu Tsai
Publikováno v:
SPIE Proceedings.
The first fully integrated SOI device using 42nm-pitch directed self-assembly (DSA) process for fin formation has been demonstrated in a 300mm pilot line environment. Two major issues were observed and resolved in the fin formation process. The cause
Autor:
Olalekan Odesanya, Chi-Chun Liu, Hsinyu Tsai, Daniel J. Dechene, Joy Cheng, Kafai Lai, Charles T. Rettner, Jassem Abdallah, Anthony Schepis, M. Guillorn, Melih Ozlem, Melia Tjio, Gregory S. Doerk, Jed W. Pitera, Neal Lafferty
Publikováno v:
SPIE Proceedings.
EUV insertion timing for High Volume Manufacturing is still an uncertainty due to source power and EUV mask infrastructure limitations. Directed Self Assembly (DSA) processes offer the promise of providing alternative ways to extend optical lithograp
Autor:
Matthew E. Colburn, Steven J. Holmes, Hsinyu Tsai, Mark Somervell, Joy Cheng, Michael Cicoria, Michael A. Guillorn, I. Cristina Estrada-Raygoza, Melia Tjio, David Hetzer, Jassem Abdallah, Anthony Schepis, Yunpeng Yin, Chi-Chun Liu
Publikováno v:
Alternative Lithographic Technologies V.
The patterning capability of the directed self-assembly (DSA) of a 42nm-pitch block copolymer on an 84nm-pitch guiding pattern was investigated in a 300mm pilot line environment. The chemoepitaxy guiding pattern was created by the IBM Almaden approac