Zobrazeno 1 - 10
of 128
pro vyhledávání: '"Anthony S Holland"'
Publikováno v:
Journal of Electronic Materials. 48:2061-2066
Energetically deposited graphitic carbon (C) is known to form high-endurance rectifying contacts to a variety of semiconductors. Graphitic contacts to n-type 6H-SiC have demonstrated current rectification ratios (at ± 1.5 V) up to 1:106. In this art
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::655904b03d5e7c94dca679a4a4af601e
https://doi.org/10.1007/s11664-019-06963-8
https://doi.org/10.1007/s11664-019-06963-8
Publikováno v:
2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
As semiconductor devices shrinks down to sub 10nm range, contact resistance has become a significant performance factor that needs to be studied. Existing test structures such as Transmission line model (TLM) structures are no longer sensitive enough
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd9fbd6011c4a6f42cf55995bdd2cd10
https://doi.org/10.1109/edtm47692.2020.9117864
https://doi.org/10.1109/edtm47692.2020.9117864
Autor:
Zijun C. Zhao, Billy J. Murdoch, Anthony S. Holland, Jim G. Partridge, Thomas J. Raeber, Dougal G. McCulloch, Hiep N. Tran, David R. McKenzie
Publikováno v:
MRS Communications. 8:1104-1110
Lateral memristors consisting of planar Ag electrodes (with sub-micrometer separation) supported on thin films of amorphous zinc-tin-oxide have been characterized. After an initial filament-forming process, each device exhibited volatile, resistive s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0338bc2a0821f1ef1d0258586ef10c00
https://doi.org/10.1557/mrc.2018.156
https://doi.org/10.1557/mrc.2018.156
Autor:
Anthony S. Holland, Geoffrey K. Reeves, Mark C Ridgway, Martyn H. Kibel, P. Tanner, Neelu Shrestha, Patrick W. Leech
Publikováno v:
MRS Advances. 2:2903-2908
The electrical characteristics of Au/Ni/Ti/ n-SiC contacts have been examined as a function of implant dose (1013-1014 ions/cm2) at 5 KeV and temperature of annealing (750-1000 °C). Measurements of specific contact resistance, ρc, were approximatel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e02b7fd70961f9cb3e172f611d14bf26
https://doi.org/10.1557/adv.2017.314
https://doi.org/10.1557/adv.2017.314
Autor:
Edwin L. H. Mayes, Anthony S. Holland, Dougal G. McCulloch, M. Kracica, Hiep N. Tran, Jim G. Partridge
Publikováno v:
Microelectronics Reliability. 71:82-85
Junctions between energetically deposited graphitic carbon and n-type 6H-SiC have been fabricated. Their current-voltage characteristics have been measured and compared with simulations using Sentaurus TCAD finite element software. Agreement between
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4e7dc1ed39446f1ee6a4d6d8a9cd2c3
https://doi.org/10.1016/j.microrel.2017.02.017
https://doi.org/10.1016/j.microrel.2017.02.017
Publikováno v:
IEEE Transactions on Electron Devices. 64:325-328
Temperature variation during semiconductor device operation can be significant and how this affects contact resistance is investigated. This paper reports improvements to analytical modeling for determining specific contact resistance (SCR) by includ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb5292f2ce387ef50c44f1364ea34f87
https://doi.org/10.1109/ted.2016.2623739
https://doi.org/10.1109/ted.2016.2623739
Publikováno v:
Facta universitatis - series: Electronics and Energetics. 30:257-265
Contact test structures where there is more than one non-metal layer, are significantly more complex to analyse compared to when there is only one such layer like active silicon on an insulating substrate. Here, we use analytical models for complex t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0a995bcc2ae1779a31627cb44e1ed2f
https://doi.org/10.2298/fuee1702257s
https://doi.org/10.2298/fuee1702257s
Publikováno v:
Facta universitatis - series: Electronics and Energetics. 30:313-326
Though the transport of charge carriers across a metal-semiconductor ohmic interface is a complex process in the realm of electron wave mechanics, such an interface is practically characterised by its specific contact resistance. Error correction has
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8421dabd8807f415655bafa948c0c089
https://doi.org/10.2298/fuee1703313h
https://doi.org/10.2298/fuee1703313h
Autor:
Anthony S. Holland, Billy J. Murdoch, David R. McKenzie, Phuong Y. Le, Hiep N. Tran, Zijun C. Zhao, Jim G. Partridge, Dougal G. McCulloch
Publikováno v:
Nanotechnology. 30(32)
Lateral memristors configured with inert Pt contacts and mixed phase tin oxide layers have exhibited immediate, forming-free, low-power bidirectional resistance switching. Activity dependent conductance and relaxation in the low resistance state rese
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2f28b852d9a85bd6d52b9c53b892a823
https://pubmed.ncbi.nlm.nih.gov/30991363
https://pubmed.ncbi.nlm.nih.gov/30991363
Autor:
Patrick W. Leech, Tuan A. Bui, Anthony S. Holland, Mohammad Saleh N Alnassar, G. K. Reeves, Jim G. Partridge, Hiep N. Tran
Publikováno v:
MRS Advances. 1:3655-3660
Finite element modelling has been used to optimise the current/ voltage (I/V) characteristics of metal/ n-SiC and metal/ n-Si diodes incorporating a thin interfacial layer. The electrical properties of the diodes have been examined in relation to the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c093d067d7ad00ac5df50736f107a18e
https://doi.org/10.1557/adv.2016.343
https://doi.org/10.1557/adv.2016.343