Zobrazeno 1 - 10
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pro vyhledávání: '"Anthony Renau"'
Autor:
Anthony Renau
Publikováno v:
MRS Advances. 7:1234-1240
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1d56692a3df41ffd9d4bdbd0eb4d076
https://doi.org/10.1557/s43580-022-00366-4
https://doi.org/10.1557/s43580-022-00366-4
Autor:
Anthony Renau
Publikováno v:
2014 IEEE International Electron Devices Meeting.
We review recent changes to implanter processing capabilities, including the adoption of cryogenic implants to reduce leakage and contact resistance as well as high temperature implants for finFETs. We discusss some specific 3D challenges and introdu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::672bb7161168a1c7bd2f46b1813ca151
https://doi.org/10.1109/iedm.2014.7047157
https://doi.org/10.1109/iedm.2014.7047157
Autor:
Anthony Renau
Publikováno v:
2010 International Workshop on Junction Technology Extended Abstracts.
Recent innovations in ion implantation technology that overcome scaling barriers at 32nm/22nm are reviewed. Some of the hardware improvements will be discussed, but the main focus will be on the process and device data that demonstrates their advanta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03dc424ee79aba2ebb9daf9529dbee22
https://doi.org/10.1109/iwjt.2010.5475003
https://doi.org/10.1109/iwjt.2010.5475003
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 55:207-210
Since the introduction of the G1500 ion implanter, the use of tandem accelerators in production ion implantation systems has become well established. However, the beam currents which are attainable at present at low energies (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ca065862ebbd5ba1a7bd9d5c379351d
https://doi.org/10.1016/0168-583x(91)96163-f
https://doi.org/10.1016/0168-583x(91)96163-f
The Effect of Amorphization Conditions on the Measured Activation of Source Drain Extension Implants
Autor:
Jonathan England, Alexander Kontos, Anthony Renau, Russell Gwilliam, Andrew Smith, Andrew Knights, Amitabh Jain, Edmund G. Seebauer, Susan B. Felch, Yevgeniy V. Kondratenko
Un‐patterned wafers were processed using low‐dose Indium or medium‐dose Germanium pre‐amorphization implants (PAI) followed by p‐type dopant implants of BF 2 or carborane (CBH). The wafers were then annealed by RTA (spike), laser anneal (LS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7bf7f745eb5c511325a9ce3c23a985c6
https://surrey.eprints-hosting.org/841346/
https://surrey.eprints-hosting.org/841346/
Autor:
Woojin Lee, Thirumal Thanigaivelan, Hans-Joachim Gossmann, Russell Low, Benjamin Colombeau, Kerry Lacey, Mark Merrill, Anthony Renau, Edmund G. Seebauer, Susan B. Felch, Amitabh Jain, Yevgeniy V. Kondratenko
Publikováno v:
AIP Conference Proceedings.
High energy well implants for retrograde well formation are usually tilted to avoid channeling. However, this can cause the well profile under the STI (Shallow Trench Isolation) to be skewed or asymmetric due to shadowing by the resist. This results
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eeef63b4556f489d08113aa8c910623f
https://doi.org/10.1063/1.3033608
https://doi.org/10.1063/1.3033608
Autor:
Anthony Renau
Publikováno v:
2007 International Workshop on Junction Technology.
A new approach to molecular implantation is presented. This is based on the use of carborane, a large and thermally stable boron molecule that can be ionized in a standard ion source. The modifications that are needed to allow it to run on a Varian V
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::352384fcd200932f4f251bfac17308b0
https://doi.org/10.1109/iwjt.2007.4279960
https://doi.org/10.1109/iwjt.2007.4279960
Autor:
Anthony Renau, Simon Ruffell
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 33:06FA02
The authors describe a new directed ribbon-beam system capable of a combination of plasma-based processing with that of a ribbon-ion-beam implantation system. In particular, the authors describe how they are utilizing this system for novel reactive-i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07f63714ce7e0dea6d48633ef9dc616a
https://doi.org/10.1116/1.4932161
https://doi.org/10.1116/1.4932161
Autor:
R. Bustin, Anthony Renau, D.L. Smatlak, Jay T. Scheuer, Antonella Cucchetti, R. Sud, J.C. Olson
Publikováno v:
2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432).
Details of the dosimetry system for the Varian VIISta 810 medium current implanter are described. The system design provides improvements to the VSEA E-series implanters. The wafer scan velocity is variable, allowing a better match of the dose to the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5f3449ae469d3ed007adb54c546d4b7
https://doi.org/10.1109/iit.2000.924228
https://doi.org/10.1109/iit.2000.924228
Publikováno v:
2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432).
The design of the VSIIta 810 medium current implanter successfully addresses the needs of advanced semiconductor manufacturing by meeting the challenges of high productivity and reduced defect density. Data are presented verifying that the beamline d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ddac07d377b62cf6275edd9cfd0750fe
https://doi.org/10.1109/iit.2000.924181
https://doi.org/10.1109/iit.2000.924181