Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Anthony M. Phan"'
Autor:
Landen D. Ryder, Thomas A. Carstens, Anthony M. Phan, Christina M. Seidlick, Michael J. Campola
Publikováno v:
2021 IEEE Nuclear and Space Radiation Effects Conference (NSREC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d36a17ed495ca679c4b95586aafe2db
https://doi.org/10.1109/nsrec45046.2021.9679354
https://doi.org/10.1109/nsrec45046.2021.9679354
Autor:
Megan C. Casey, Hak Kim, Anthony M. Phan, Ray Ladbury, Jean-Marie Lauenstein, Alyson D. Topper
Publikováno v:
IRPS
Heavy-ion radiation can result in silicon carbide power device degradation and/or catastrophic failure. Test procedures and data interpretation must consider the impact that heavy-ion induced off-state leakage current increases will have on subsequen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0b670e9be6da816c887ee6db4ffb005
https://doi.org/10.1109/irps46558.2021.9405180
https://doi.org/10.1109/irps46558.2021.9405180
Autor:
Alyson D. Topper, Melanie D. Berg, Jonathan A. Pellish, Jean-Marie Lauenstein, James Forney, Edward P. Wilcox, Jason M. Osheroff, Peter J. Majewicz, Anthony M. Phan, Hak Kim, Edward J. Wyrwas, Caroline M. Fedele, Megan C. Casey, Max F. Chaiken, Thomas A. Carstens, Martha V. O'Bryan, Michael J. Campola, Donna J. Cochran
Publikováno v:
2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC).
Total ionizing dose, displacement damage dose, and single event effects testing were performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include FETs, flash memory, FPGAs, optoel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38d74e8e90356b20a9fdd8518e0cdb3b
https://doi.org/10.1109/redw51883.2020.9325841
https://doi.org/10.1109/redw51883.2020.9325841
Autor:
Hak Kim, Raymond L. Ladbury, Edward P. Wilcox, Dakai Chen, Anthony M. Phan, Christina Seidleck, Kenneth A. LaBel
Publikováno v:
IEEE Transactions on Nuclear Science. 65:19-26
We evaluated the effects of heavy ion and proton irradiation for a 3-D NAND flash. The 3-D NAND showed similar single-event upset (SEU) sensitivity to a planar NAND of identical density in the multiple-level cell (MLC) storage mode. The 3-D NAND show
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fef4ba79bb4f65987b19ff1dbf44faf5
https://doi.org/10.1109/tns.2017.2764852
https://doi.org/10.1109/tns.2017.2764852
Autor:
Raymond L. Ladbury, Christina Seidleck, Kenneth A. LaBel, Edward P. Wilcox, Dakai Chen, Anthony M. Phan, Hak Kim
Publikováno v:
IEEE Transactions on Nuclear Science. 64:332-337
We investigated the single-event effect (SEE) susceptibility of the Micron 16 nm NAND flash, and found that the single-event upset (SEU) cross section varied inversely with cumulative fluence. We attribute the effect to the variable upset sensitiviti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec66ed4d336d96724ddd686984f31874
https://doi.org/10.1109/tns.2016.2615719
https://doi.org/10.1109/tns.2016.2615719
Autor:
Hak Kim, Christina Seidleck, Melanie D. Berg, Edward P. Wilcox, Kenneth A. LaBel, Dakai Chen, Anthony M. Phan, Marco A. Figueiredo
Publikováno v:
IEEE Transactions on Nuclear Science. 62:2703-2708
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7666ec6a72f5d0146419d4b638d28c06
https://doi.org/10.1109/tns.2015.2476475
https://doi.org/10.1109/tns.2015.2476475
Autor:
Nicolas J.-H. Roche, Dakai Chen, Ani Khachatrian, Anthony M. Phan, Stephen P. Buchner, Kenneth A. LaBel, Edward Wilcox, Hak Kim
Publikováno v:
IEEE Transactions on Nuclear Science. 61:3088-3094
We show the single-event effect characteristics of a production-level embedded resistive memory. The resistive memory under investigation is a reduction-oxidation random access memory embedded inside a microcontroller. The memory structure consists o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1bfda94aa086f4d3f2de33ab387cdfa
https://doi.org/10.1109/tns.2014.2361488
https://doi.org/10.1109/tns.2014.2361488
Autor:
James R. Schwank, Nathaniel A. Dodds, Anthony M. Phan, Hak Kim, Christina Seidleck, Melanie D. Berg, Michael S. Gordon, C.M. Castaneda, Jonathan A. Pellish, Paul W. Marshall, Kenneth P. Rodbell, Kenneth A. LaBel
Publikováno v:
IEEE Transactions on Nuclear Science. 61:2896-2903
We report low-energy proton and alpha particle SEE data on a 32 nm silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) static random access memory (SRAM) that demonstrates the criticality of understanding and using low-energy pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d65484a6716cd58c55bc3d3cf98f383a
https://doi.org/10.1109/tns.2014.2369171
https://doi.org/10.1109/tns.2014.2369171
Autor:
Alyson D. Topper, Raymond L. Ladbury, Megan C. Casey, Anthony M. Phan, Hak Kim, Kenneth A. LaBel, Edward P. Wilcox, Jean-Marie Lauenstein
Publikováno v:
2017 IEEE Radiation Effects Data Workshop (REDW).
Single-event effect (SEE) radiation test results are presented for various trench-gate power MOSFETs. The heavy-ion response of the first (and only) radiation-hardened trench-gate power MOSFET is evaluated: the manufacturer SEE response curve is veri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdc68a3d4ef331382e0768f4ac3cadb1
https://doi.org/10.1109/nsrec.2017.8115473
https://doi.org/10.1109/nsrec.2017.8115473
Autor:
Hyun-Chul Kim, Edward P. Wilcox, Ken LaBel, Melanie D. Berg, Anthony M. Phan, Christina Seidleck, Raymond L. Ladbury
Publikováno v:
IEEE Transactions on Nuclear Science. 60:4457-4463
The speed, tight timing requirements packaging and complicated error behavior of DDR2 and DDR3 SDRAMs pose significant challenges for single-event testing. Often, each new generation will require an expensive new tester with a state-of-the-art contro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::868810b14e0543e6e9266f3cc6d1bb12
https://doi.org/10.1109/tns.2013.2285517
https://doi.org/10.1109/tns.2013.2285517