Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Anthony J. Konecni"'
Publikováno v:
Thin Solid Films. 320:52-57
We have successfully integrated Al plugs into a 0.25- μ m CMOS flow using two different chemical vapor deposition (CVD) Al metallization process schemes. Both process schemes utilized CVD Al grown from dimethyl aluminum hydride (DMAH) followed by ph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb1e713365992da55b5afc124ed75633
https://doi.org/10.1016/s0040-6090(97)01064-x
https://doi.org/10.1016/s0040-6090(97)01064-x
Autor:
Yu-Pei Chen, Joseph D. Luttmer, Wei-Yung Hsu, Jiong-Ping Lu, Anthony J. Konecni, Girish A. Dixit, Robert H. Havemann
Publikováno v:
Thin Solid Films. 320:73-76
New contact fill integration schemes were developed for high aspect ratio Gb DRAM contact metallization. Integration schemes for both tungsten-plug contacts and aluminum-plug contacts were studied. For tungsten-plug contacts, various types of titaniu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d3e824b17680f11beaee353f74bca7b
https://doi.org/10.1016/s0040-6090(97)01068-7
https://doi.org/10.1016/s0040-6090(97)01068-7
Autor:
Gregory B. Shinn, Robert H. Havemann, Ken Brennan, Kelly J. Taylor, Girish A. Dixit, Anthony J. Konecni, Mi-Chang Chang, Abha Singh, Charles K. Lee, Wei-Yung Hsu
Publikováno v:
1996 Symposium on VLSI Technology. Digest of Technical Papers.
Low temperature aluminum plug fill schemes such as CVD Al and high pressure ForceFill/sup TM/ Al offer significant advantages in terms of lower via resistance and compatibility with low-k polymer dielectrics. The low processing temperature is desirab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8e7530e3b07e077a9261a6e13008c94
https://doi.org/10.1109/vlsit.1996.507803
https://doi.org/10.1109/vlsit.1996.507803