Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Anthony J Annunziata"'
Autor:
Anthony J Annunziata, Mark W. Miller, Dana Fein-Schaffer, Sage E Hawn, Karen A. Ryabchenko, Erika J. Wolf
Publikováno v:
Journal of Traumatic Stress. 35:559-569
The COVID-19 pandemic has had unprecedented effects on lifestyle stability and physical and mental health. We examined the impact of preexisting posttraumatic stress disorder (PTSD), alcohol use disorder (AUD), and depression on biopsychosocial respo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b81039b5e0dcf02ef668937c25d7df7f
https://doi.org/10.1002/jts.22770
https://doi.org/10.1002/jts.22770
Autor:
Jeong-Heon Park, Janusz J. Nowak, Philip L. Trouilloud, Eugene J. O Sullivan, Raman Kothandaraman, R. P. Robertazzi, Young-Hyun Kim, Jonathan Z. Sun, J.W. Lee, Gen P. Lauer, Guohan Hu, Anthony J. Annunziata, Daniel C. Worledge
Publikováno v:
IEEE Magnetics Letters. 7:1-4
The dependence of the write-error rate (WER) on the applied write voltage, write pulse width, and device size was examined in individual devices of a spin-transfer torque (STT) magnetic random-access memory (MRAM) 4 kbit chip. We present 10 ns switch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efae9c4204806aed6fef55ecd2fe98e4
https://doi.org/10.1109/lmag.2016.2539256
https://doi.org/10.1109/lmag.2016.2539256
Autor:
Michael F. Lofaro, Anthony J. Annunziata, Daniel C. Edelstein, Michael C. Gaidis, Dirk Pfeiffer, Adam M. Pyzna, Eugene J. O'Sullivan, Nathan P. Marchack, Eric A. Joseph, Yu Zhu, Armand Galan, P. L. Trouilloud, Jemima Gonsalves, S. Holmes
Publikováno v:
ECS Transactions. 69:127-137
Recent developments in new switching methods, such as spin transfer torque and temperature-assisted switching (TAS), have greatly increased interest in MRAM. However, MRAM fabrication is challenging due to the lack of magnetic materials processing ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8fc2df02d639dbf704f6dd6c94b16f83
https://doi.org/10.1149/06903.0127ecst
https://doi.org/10.1149/06903.0127ecst
Autor:
C. Kothandaraman, E. J. O'Sullivan, J. Harms, Yohan Kim, S. Brown, P. L. Trouilloud, Anthony J. Annunziata, W. Chen, J. Z. Sun, Y. Zhu, Nathan P. Marchack, S. Murthy, J.H. Park, R. P. Robertazzi, D. C. Worledge, G. Hu, J. H. Lee, G. Lauer, M. Reuter, Janusz J. Nowak
Publikováno v:
VLSI-DAT
To achieve low write current in high density Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) arrays, it is important to understand and co-optimize the different kinds of device switching currents, governed by different materials paramet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::90ed0003d41cfd237ea02d2fc6f76517
https://doi.org/10.1109/vlsi-tsa.2017.7942445
https://doi.org/10.1109/vlsi-tsa.2017.7942445
Autor:
Y. Zhu, D. C. Worledge, Anthony J. Annunziata, J. Z. Sun, J. Harms, G. Lauer, Janusz J. Nowak, R. P. Robertazzi, S. Brown, W. Chen, M. Reuter, Nathan P. Marchack, E. J. O'Sullivan, P. L. Trouilloud, G. Hu, J.H. Park, J. H. Lee, Luqiao Liu, S. Murthy, Yohan Kim
Publikováno v:
2015 IEEE International Electron Devices Meeting (IEDM).
We report switching performance of perpendicularly magnetized Spin-Transfer Torque MRAM (STT-MRAM) devices with double tunnel barriers and two reference layers. We show that stacks with double tunnel barriers improve the switching efficiency (Eb/Ic0)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57482fab00e1498130308915139f1145
https://doi.org/10.1109/iedm.2015.7409772
https://doi.org/10.1109/iedm.2015.7409772
Autor:
Michael J. Rooks, Daniel E. Prober, Aviad Frydman, Luigi Frunzio, Anthony J. Annunziata, Daniel F. Santavicca, Joel D. Chudow
Publikováno v:
IEEE Transactions on Applied Superconductivity. 19:327-331
We investigate the performance of superconducting nanowire photon detectors fabricated from ultra-thin Nb. A direct comparison is made between these detectors and similar nanowire detectors fabricated from NbN. We find that Nb detectors are significa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d0e71f24b5a8ff37ed8628a8b3d66e7f
https://doi.org/10.1109/tasc.2009.2018740
https://doi.org/10.1109/tasc.2009.2018740
Autor:
Daniel F. Santavicca, Luigi Frunzio, Matthew O. Reese, Anthony J. Annunziata, Daniel E. Prober
Publikováno v:
Superconductor Science and Technology. 20:S398-S402
We have designed and constructed a custom far-infrared Fourier transform spectrometer using an antenna-coupled bolometer as a detector. The active element of the detector is a superconducting niobium microbridge, and the far-infrared signal is couple
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a5698b0c8861b793911027c54a67cc3
https://doi.org/10.1088/0953-2048/20/11/s19
https://doi.org/10.1088/0953-2048/20/11/s19
Autor:
S. Brown, J. Z. Sun, C. Kothandaraman, G. Hu, E. J. O'Sullivan, Anthony J. Annunziata, Jeong-Heon Park, J. Harms, Young Keun Kim, P. L. Trouilloud, W. Chen, D. C. Worledge, Luqiao Liu, Janusz J. Nowak, R. P. Robertazzi, G. Lauer, S. Murthy, J.W. Lee
Publikováno v:
2015 IEEE Magnetics Conference (INTERMAG).
Spin Transfer Torque Magnetic Random Access Memory (MRAM) possesses a unique combination of high speed, high endurance, non-volatility, and small cell size. Among the emerging new memory technologies, including phase change memory, resistive random a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8dcaa80d43a359db9a7be432f6e675c6
https://doi.org/10.1109/intmag.2015.7157006
https://doi.org/10.1109/intmag.2015.7157006
Autor:
E. J. O'Sullivan, Anthony J Annunziata, Jemima Gonsalves, G. Hu, Eric A Joseph, Raman Kothandaraman, Gen Lauer, Nathan Marchack, J. J. Nowak, R. P. Robertazzi, J. Z. Sun, Thitima Suwannasiri, P. L. Trouilloud, Yu Zhu, D. C. Worledge
Publikováno v:
ECS Meeting Abstracts. :1138-1138
Spin-transfer torque [1] MRAM (STT-MRAM) continues to be the subject of intense investigation due to its scalability and excellent endurance. Initially explored mainly as a DRAM replacement, STT-MRAM with perpendicularly magnetized materials is now t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17d93251aec26d7726df819710785d5c
https://doi.org/10.1149/ma2017-02/26/1138
https://doi.org/10.1149/ma2017-02/26/1138
Autor:
Eugene Delenia, P. M. Rice, Paul Chevalier, Yu Zhu, Luc Thomas, Teya Topuria, Eugene J. O'Sullivan, Cheng-Wei Chien, Anthony J. Annunziata, J. Hummel, Chien-Chung Hung, Stuart S. P. Parkin, Eric A. Joseph, Michael C. Gaidis, William J. Gallagher
Publikováno v:
2011 International Electron Devices Meeting.
In this paper, we report the first demonstration of CMOS-integrated racetrack memory. The devices measured are complete memory cells integrated into the back end of line of IBM 90 nm CMOS. We show good integration yield across 200 mm wafers. With mag
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6e3799a3f62e7bb6b7e0994c37def9a
https://doi.org/10.1109/iedm.2011.6131604
https://doi.org/10.1109/iedm.2011.6131604