Výsledky vyhledávání - "Anthonin Verdy"

Toward ultimate nonvolatile resistive memories: The mechanism behind ovonic threshold switching revealed

Autor: Jean-Yves Raty, Jean-Baptiste Dory, Jérôme Gaudin, Jean-Baptiste Jager, Mathieu Bernard, Francesco d'Acapito, Anthonin Verdy, Gabriele Navarro, Pierre Noé

Publikováno v: Science Advances
Science Advances, American Association for the Advancement of Science (AAAS), 2020, 6 (9), pp.eaay2830. ⟨10.1126/sciadv.aay2830⟩
'Science Advances ', vol: 6, pages: eaay2830-1-eaay2830-11 (2020)
Science Advances, 2020, 6 (9), pp.eaay2830-1-eaay2830-11. ⟨10.1126/sciadv.aay2830⟩
Science Advances 6 (2020). doi:10.1126/sciadv.aay2830
info:cnr-pdr/source/autori:Noe, Pierre; Verdy, Anthonin; d'Acapito, Francesco; Dory, Jean-Baptiste; Bernard, Mathieu; Navarro, Gabriele; Jager, Jean-Baptiste; Gaudin, Jerome; Raty, Jean-Yves/titolo:Toward ultimate nonvolatile resistive memories: The mechanism behind ovonic threshold switching revealed/doi:10.1126%2Fsciadv.aay2830/rivista:Science Advances/anno:2020/pagina_da:/pagina_a:/intervallo_pagine:/volume:6

We reveal the microscopic origin of the ovonic threshold switching mechanism.
Fifty years after its discovery, the ovonic threshold switching (OTS) phenomenon, a unique nonlinear conductivity behavior observed in some chalcogenide glasses, has b

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::869b6f9d1510052d2973b862c737bc85
https://hal-cea.archives-ouvertes.fr/cea-02624333

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Programming Current Reduction in GeS2+Sb2Te3 Based Phase-Change Memory

Autor: Guillaume Bourgeois, Pierre Noé, Anthonin Verdy, G Navarro, N. Castellani, Veronique Sousa, N. Bernier, Etienne Nowak, Mathieu Bernard, L. Perniola, Serge Blonkowski, P. Kowalczyk, J. Kluge

Publikováno v: Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::430eb66582aea78c1c45f31d875003af
https://doi.org/10.7567/ssdm.2017.a-8-05

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Innovative GeS2/Sb2Te3 based phase change memory for low power applications

Autor: N. Castellani, Nicolas Bernier, Luca Perniola, Anthonin Verdy, Mathieu Bernard, Veronique Sousa, Guillaume Bourgeois, Serge Blonkowski, Sophie Chevalliez, Philippe Kowalczyk, Gabriele Navarro, J. Kluge, Pierre Noé

Publikováno v: NVMTS

In this paper, we analyze the electrical performance of a novel Phase-Change Memory (PCM) device based on GeS 2 /Sb 2 Te 3 composition (GSST). Through physico-chemical analysis and electrical characterization we demonstrate a great reduction of the R

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::159552dbef9ecc060d8c36b0bd006c47
https://doi.org/10.1109/nvmts.2017.8171305

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Improved Electrical Performance Thanks to Sb and N Doping in Se-Rich GeSe-Based OTS Selector Devices

Autor: Pierre Noé, Mathieu Bernard, Guillaume Bourgeois, Luca Perniola, Frederique Fillot, Gabriele Navarro, Anthonin Verdy, J. Garrione, Veronique Sousa

Publikováno v: 2017 IEEE International Memory Workshop (IMW).

In this paper, we investigate the impact of Sb and N doping in Se rich GeSe based Ovonic Threshold Switching (OTS) selector devices, targeting crossbar memory applications. Through physico- chemical analysis and electrical characterization we demonst

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6cfbc7eb94b173c2ed4a230e4f2c6751
https://doi.org/10.1109/imw.2017.7939088

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Energy-resolved hot carrier relaxation dynamics in monocrystalline plasmonic nanoantennas

Autor: Marlène Petit, Olivier Demichel, Alexandre Bouhelier, Régis Méjard, Anthonin Verdy, Benoit Cluzel

Hot carriers are energetic photo-excited carriers driving a large range of chemico-physical mechanisms. At the nanoscale, an efficient generation of these carriers is facilitated by illuminating plasmonic antennas. However, the ultrafast relaxation r

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d28386eea117391c250d8b254f648d22
http://arxiv.org/abs/1606.06053

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Effect of Nitrogen on the Amorphous Structure and Subthreshold Electrical Conduction of GeSeSb‐Based Ovonic Threshold Switching Thin Films

Autor: Pierre Noé, Francesco d'Acapito, Jean-Baptiste Dory, Anthonin Verdy, Mathieu Bernard, Gabriele Navarro

Publikováno v: physica status solidi (RRL) – Rapid Research Letters
Physica status solidi. Rapid research letters
(2019). doi:10.1002/pssr.201900548
info:cnr-pdr/source/autori:Verdy, Anthonin; d'Acapito, Francesco; Dory, Jean-Baptiste; Navarro, Gabriele; Bernard, Mathieu; Noe, Pierre/titolo:Effect of Nitrogen on the Amorphous Structure and Subthreshold Electrical Conduction of GeSeSb-Based Ovonic Threshold Switching Thin Films/doi:10.1002%2Fpssr.201900548/rivista:Physica status solidi. Rapid research letters (Print)/anno:2019/pagina_da:/pagina_a:/intervallo_pagine:/volume

Herein, the amorphous structure of Ge-Se-Sb-N chalcogenide thin films is investigated through Raman, infrared, and X-ray absorption spectroscopies in the light of the electrical performances of such materials once integrated in ovonic threshold switc

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c5115808e90cefc55495eb5d3cf1583d

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