Zobrazeno 1 - 10 of 12 pro vyhledávání: '"Antal Koos"'
1
Akademický článek
Interface Properties of MoS2 van der Waals Heterojunctions with GaN
Autor: Salvatore Ethan Panasci, Ioannis Deretzis, Emanuela Schilirò, Antonino La Magna, Fabrizio Roccaforte, Antal Koos, Miklos Nemeth, Béla Pécz, Marco Cannas, Simonpietro Agnello, Filippo Giannazzo
Publikováno v: Nanomaterials, Vol 14, Iss 2, p 133 (2024)
The combination of the unique physical properties of molybdenum disulfide (MoS2) with those of gallium nitride (GaN) and related group-III nitride semiconductors have recently attracted increasing scientific interest for the realization of innovative
Externí odkaz: https://doaj.org/article/a776ae412cb94623a73bafba73d36357
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2
Akademický článek
Large-Area MoS2 Films Grown on Sapphire and GaN Substrates by Pulsed Laser Deposition
Autor: Marianna Španková, Štefan Chromik, Edmund Dobročka, Lenka Pribusová Slušná, Marcel Talacko, Maroš Gregor, Béla Pécz, Antal Koos, Giuseppe Greco, Salvatore Ethan Panasci, Patrick Fiorenza, Fabrizio Roccaforte, Yvon Cordier, Eric Frayssinet, Filippo Giannazzo
Publikováno v: Nanomaterials, Vol 13, Iss 21, p 2837 (2023)
In this paper, we present the preparation of few-layer MoS2 films on single-crystal sapphire, as well as on heteroepitaxial GaN templates on sapphire substrates, using the pulsed laser deposition (PLD) technique. Detailed structural and chemical char
Externí odkaz: https://doaj.org/article/599297df99194f91b0d35d267721607d
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3
Akademický článek
Highly Homogeneous 2D/3D Heterojunction Diodes by Pulsed Laser Deposition of MoS2 on Ion Implantation Doped 4H‐SiC
Autor: Filippo Giannazzo, Salvatore Ethan Panasci, Emanuela Schilirò, Patrick Fiorenza, Giuseppe Greco, Fabrizio Roccaforte, Marco Cannas, Simonpietro Agnello, Antal Koos, Béla Pécz, Marianna Španková, Štefan Chromik
Publikováno v: Advanced Materials Interfaces, Vol 10, Iss 1, Pp n/a-n/a (2023)
Abstract In this paper, 2D/3D heterojunction diodes have been fabricated by pulsed laser deposition (PLD) of MoS2 on 4H‐SiC(0001) surfaces with different doping levels, i.e., n− epitaxial doping (≈1016 cm−3) and n+ ion implantation doping (>1
Externí odkaz: https://doaj.org/article/beba597e3a5747f7aa7169b6c82d0d34
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4
Akademický článek
Multiscale Investigation of the Structural, Electrical and Photoluminescence Properties of MoS2 Obtained by MoO3 Sulfurization
Autor: Salvatore E. Panasci, Antal Koos, Emanuela Schilirò, Salvatore Di Franco, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Simonpietro Agnello, Marco Cannas, Franco M. Gelardi, Attila Sulyok, Miklos Nemeth, Béla Pécz, Filippo Giannazzo
Publikováno v: Nanomaterials, Vol 12, Iss 2, p 182 (2022)
In this paper, we report a multiscale investigation of the compositional, morphological, structural, electrical, and optical emission properties of 2H-MoS2 obtained by sulfurization at 800 °C of very thin MoO3 films (with thickness ranging from ~2.8
Externí odkaz: https://doaj.org/article/1d9e14c8f66f4f799c4551961a35bb86
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5
Highly Homogeneous 2D/3D Heterojunction Diodes by Pulsed Laser Deposition of MoS2 on Ion Implantation Doped 4H-SiC
Autor: Filippo Giannazzo, Salvatore Ethan Panasci, Emanuela Schilirò, Patrick Fiorenza, Giuseppe Greco, Fabrizio Roccaforte, Marco Cannas, Simonpietro Agnello, Antal Koos, Béla Pécz, Marianna Španková, Štefan Chromik
In this paper, 2D/3D heterojunction diodes have been fabricated by pulsed laser deposition (PLD) of MoS2 on 4H-SiC(0001) surfaces with different doping levels, i.e., n− epitaxial doping (≈1016 cm−3) and n+ ion implantation doping (>1019 cm−3)
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::090c0736ba7bae092b2cc4be95a81e62
https://hdl.handle.net/10447/579401
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