Ion implantation in β-Ga2O3: Physics and technology

Autor: David Tetelbaum, Raquel Giulian, Alexey Mikhaylov, A. V. Almaev, Dmitry Korolev, Pedro Luis Grande, E. V. Okulich, Mahesh Kumar, Ashok Kumar, Charles A. Bolzan, Alena Nikolskaya, Anton Stepanov, Dmitry Nikolichev, Antônio BuaczikJr., D. Gogova

Publikováno v: Journal of vacuum science & technology A: Vacuum, surfaces, and films. 2021. Vol. 39, № 3. P. 030802-1-030802-25
Repositório Institucional da UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS

Gallium oxide, and in particular its thermodynamically stable β-Ga2O3 phase, is within the most exciting materials in research and technology nowadays due to its unique properties. The very high breakdown electric field and the figure of merit rival

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