Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Anselmo Jaehyeong Lee"'
Autor:
Sung Wook Lee, Anselmo Jaehyeong Lee, Ja-Young Kim, Hee-Bog Kang, Woo-Sung Lee, Jung-Won Shin
Publikováno v:
ECS Transactions. 75:77-80
Internal gettering (IG) of metallic impurities (MI) in Czochralski silicon (CZ-Si) is one of the key techniques in modern microelectronic engineering to manufacture high-performance devices with high process yield. Various silicon substrates such as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::48f5c4cab367ae938aab7f374bf68f21
https://doi.org/10.1149/07504.0077ecst
https://doi.org/10.1149/07504.0077ecst
Autor:
Jang-Seop Kim, Jea-Gun Park, Hyung-Kook Park, Hyeung-il Park, Byeong-Sam Moon, Sanghyun Lee, Anselmo Jaehyeong Lee, Jeong-Hoon An
Publikováno v:
ECS Transactions. 75:103-107
Gettering techniques are the key features in recent semiconductor industry to develop the high performance devices. Above all, the intrinsic gettering is considered as the easiest way to achieve metal gettering effect in a silicon substrate with the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e0a5e2102ac407efb0dc9f82c98fa9e9
https://doi.org/10.1149/07504.0103ecst
https://doi.org/10.1149/07504.0103ecst
Publikováno v:
Solid-State Electronics. 164:107743
A novel haze technique for analyzing point-defect distribution in Czochralski Si (CZ-Si) wafers without intentional contamination by transition metals was proposed. Based on the background haze in high-temperature oxidation, a three-step oxidation pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::584f4e5f5c5dbac8b089be157c50d4a0
https://doi.org/10.1016/j.sse.2019.107743
https://doi.org/10.1016/j.sse.2019.107743
Publikováno v:
ECS Journal of Solid State Science and Technology. 5:P3008-P3012
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef48548bac4f66caf9547e45832add3e
https://doi.org/10.1149/2.0021604jss
https://doi.org/10.1149/2.0021604jss
Publikováno v:
ECS Meeting Abstracts. :1777-1777
Oxygen precipitates in Czochralski silicon (CZ-Si) are still considered as the major process-induced defects found in semiconductor device fabrication process because the role of oxygen precipitates in device process such as gettering of metal impuri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f9270c57874b706e76fa9067cf5d7eb4
https://doi.org/10.1149/ma2016-02/26/1777
https://doi.org/10.1149/ma2016-02/26/1777