Zobrazeno 1 - 10
of 72
pro vyhledávání: '"Anquan Jiang"'
Autor:
Guangdi Feng, Qiuxiang Zhu, Xuefeng Liu, Luqiu Chen, Xiaoming Zhao, Jianquan Liu, Shaobing Xiong, Kexiang Shan, Zhenzhong Yang, Qinye Bao, Fangyu Yue, Hui Peng, Rong Huang, Xiaodong Tang, Jie Jiang, Wei Tang, Xiaojun Guo, Jianlu Wang, Anquan Jiang, Brahim Dkhil, Bobo Tian, Junhao Chu, Chungang Duan
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-11 (2024)
Abstract Among today’s nonvolatile memories, ferroelectric-based capacitors, tunnel junctions and field-effect transistors (FET) are already industrially integrated and/or intensively investigated to improve their performances. Concurrently, becaus
Externí odkaz:
https://doaj.org/article/98c54ecf4daf47c7ad2b723b003cf161
Publikováno v:
Nanomaterials, Vol 13, Iss 20, p 2789 (2023)
Single LiNbO3 (LNO) crystals are widely utilized in surface acoustic wave devices, optoelectronic devices, and novel ferroelectric memory devices due to their remarkable electro-optic and piezoelectric properties, and high saturation and remnant pola
Externí odkaz:
https://doaj.org/article/82b71240d4ff43e4ae55f47fad8cd992
Publikováno v:
ACS Applied Materials & Interfaces. 15:8691-8698
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0d92381f96014b95bd5bbefc7eada4d
https://doi.org/10.1021/acsami.2c20579
https://doi.org/10.1021/acsami.2c20579
Publikováno v:
Ceramics International. 48:26294-26302
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d18ad546b3615136df8dfa3d9f4de73
https://doi.org/10.1016/j.ceramint.2022.05.313
https://doi.org/10.1016/j.ceramint.2022.05.313
Publikováno v:
Nano Research. 15:3606-3613
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2f2143d8eb238d408561f2f0385d1fb
https://doi.org/10.1007/s12274-021-3899-5
https://doi.org/10.1007/s12274-021-3899-5
Publikováno v:
Ceramics International. 47:22753-22759
Large domain wall (DW) conductivity in an insulating ferroelectric plays an important role in the future nanosensors and nonvolatile memories. However, the wall current was usually too small to drive high-speed memory circuits and other agile nanodev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::973e0f6d9342b7191a45f891794246f1
https://doi.org/10.1016/j.ceramint.2021.04.293
https://doi.org/10.1016/j.ceramint.2021.04.293
Publikováno v:
Journal of Materials Science. 56:11209-11218
Multifunctional LiNbO3 material plays an important role in domain wall microelectronics and nonlinear optoelectronics. However, the material is hard and relatively inert, and hence is quite difficultly etched. A new oblique method to etch LiNbO3 memo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::247f66118638b6161a4e606c0bafc335
https://doi.org/10.1007/s10853-021-06040-8
https://doi.org/10.1007/s10853-021-06040-8
Publikováno v:
Ceramics International. 47:10130-10136
Large domain wall conductivity in insulating ferroelectric thin films provides a new idea for non-destructive readout of domain information of a nonvolatile ferroelectric domain wall memory. However, there are several challenges hindering its develop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0b961354a20440fc148ad071cf67602
https://doi.org/10.1016/j.ceramint.2020.12.161
https://doi.org/10.1016/j.ceramint.2020.12.161
Autor:
Kaiping Yuan, Jia-He Yang, Li-Yuan Zhu, Anquan Jiang, Hong-Liang Lu, Hong-Ping Ma, David Wei Zhang, Jia-Jia Tao, Cheng-Zhou Hang
Publikováno v:
Journal of Colloid and Interface Science. 568:81-88
Development of high-performance ammonia (NH3) sensor is imperative for monitoring NH3 in the living environment. In this work, to obtain a high performance NH3 gas sensor, structurally well-defined WO3@SnO2 core shell nanosheets with a controllable t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2143f29e7da91212406de74fa79bbade
https://doi.org/10.1016/j.jcis.2020.02.042
https://doi.org/10.1016/j.jcis.2020.02.042
Publikováno v:
2021 IEEE 14th International Conference on ASIC (ASICON).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fdc3b3337786ba79d97e3eace440de2
https://doi.org/10.1109/asicon52560.2021.9620490
https://doi.org/10.1109/asicon52560.2021.9620490