Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Annija Elizabete Goldmane"'
Autor:
Liga AVOTINA, Annija Elizabete GOLDMANE, Edgars VANAGS, Aija TRIMDALE-DEKSNE, Lada BUMBURE, Marina ROMANOVA, Hermanis SOROKINS, Alexei MUHIN, Aleksandrs ZASLAVSKIS, Gunta KIZANE, Yuri DEKHTYAR
Publikováno v:
Medžiagotyra, Vol 29, Iss 3, Pp 280-284 (2023)
In the divertor of the tokamak type fusion reactors tungsten and tungsten-covered plasma facing materials are currently among the selected materials. However, metallic, high-Z plasma facing materials require plasma mitigation. Recent researches show,
Externí odkaz:
https://doaj.org/article/acc51e3728d9426b878a8132551c15f1
Autor:
Annija Elizabete GOLDMANE, Liga AVOTINA, Marina ROMANOVA, Alexei MUHIN, Aleksandrs ZASLAVSKIS, Gunta KIZANE, Yuri DEKHTYAR
Publikováno v:
Medžiagotyra, Vol 28, Iss 3, Pp 376-380 (2022)
Tungsten (W) and tungsten diboride (WB2) materials can be used to fabricate electron emission layers in field emission microelectronic devices. The characterization and quality assurance of synthesized films is crucial for the good performance of the
Externí odkaz:
https://doaj.org/article/f6df2a56c6ed45ad8edb640e64e72bb8
Autor:
Liga AVOTINA, Annija Elizabete GOLDMANE, Edgars VANAGS, Aija TRIMDALE-DEKSNE, Lada BUMBURE, Marina ROMANOVA, Hermanis SOROKINS, Alexei MUHIN, Aleksandrs ZASLAVSKIS, Gunta KIZANE, Yuri DEKHTYAR
Publikováno v:
Materials Science.
In the divertor of the tokamak type fusion reactors tungsten and tungsten-covered plasma facing materials are currently among the selected materials. However, metallic, high-Z plasma facing materials require plasma mitigation. Recent researches show,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::edb46f77235e284a0b35b8552c49b4b0
https://doi.org/10.5755/j02.ms.32082
https://doi.org/10.5755/j02.ms.32082
Autor:
Annija Elizabete Goldmane, Liga Avotina, Edgars Vanags, Aija Trimdale-Deksne, Aleksandrs Zaslavskis, Gunta Kizane, Yuri Dekhtyar
Publikováno v:
Journal of Physics: Conference Series. 2423:012022
Physical vapor deposition (PVD) of metallic thin films is used extensively in the fabrication of semiconductor technology devices - use as of lately for them have grown. Tungsten (W) is a low resistivity, refractory metal, that is often deposited by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7076fe56f8e33fe764dde4ceb340af4f
https://doi.org/10.1088/1742-6596/2423/1/012022
https://doi.org/10.1088/1742-6596/2423/1/012022