Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Annie Kumar"'
Autor:
David Kohen, Xuan Sang Nguyen, Sachin Yadav, Annie Kumar, Riko I Made, Christopher Heidelberger, Xiao Gong, Kwang Hong Lee, Kenneth Eng Kian Lee, Yee Chia Yeo, Soon Fatt Yoon, Eugene A. Fitzgerald
Publikováno v:
AIP Advances, Vol 6, Iss 8, Pp 085106-085106-6 (2016)
We report on the growth of an In0.30Ga0.70As channel high-electron mobility transistor (HEMT) on a 200 mm silicon wafer by metal organic vapor phase epitaxy. By using a 3 μm thick buffer comprising a Ge layer, a GaAs layer and an InAlAs compositiona
Externí odkaz:
https://doaj.org/article/a99111195ebf452eaf6f7a3a808d98a1
Autor:
Bernardette Kunert, Yves Mols, Reynald Alcotte, Peter Swekis, Sachin Yadav, Abhitosh Vais, Annie Kumar, Guillaume Boccardi, Robert Langer, Bertrand Parvais, Nadine Collaert
Publikováno v:
ECS Transactions. 111:105-116
The power amplifier (PA) in an RF front-end module operating above 100 GHz required for 6G wireless networks is the most power-hungry device circuit component. In that respect, InP-based heterojunction bipolar transistors (HBT) clearly outperform oth
Autor:
Qiwen Kong, Long Liu, Zijie Zheng, Chen Sun, Zuopu Zhou, Leming Jiao, Annie Kumar, Rui Shao, Jishen Zhang, Haiwen Xu, Yue Chen, Bich-Yen Nguyen, Xiao Gong
Publikováno v:
IEEE Transactions on Electron Devices. 70:2059-2066
Autor:
Chen Sun, Kaizhen Han, Subhranu Samanta, Qiwen Kong, Jishen Zhang, Haiwen Xu, Xinke Wang, Annie Kumar, Chengkuan Wang, Zijie Zheng, Xunzhao Yin, Kai Ni, Xiao Gong
Publikováno v:
IEEE Transactions on Electron Devices. 69:5262-5269
Autor:
Jiuren Zhou, Annie Kumar, Chengkuan Wang, Zijie Zheng, Qiwen Kong, Jishen Zhang, Xiao Gong, Kaizhen Han, Haiwen Xu, Chen Sun, Subhranu Samanta
Publikováno v:
IEEE Electron Device Letters. 42:1786-1789
We report the temperature-dependent operation of back-end-of-line (BEOL) compatible amorphous indium-gallium-zinc-oxide ( ${a}$ -IGZO) ferroelectric thin-film transistors (FeTFTs) with a large memory window (MW) more than 3 V. Our ${a}$ -IGZO FeTFTs
Autor:
Qiwen Kong, Long Liu, Zijie Zheng, Chen Sun, Annie Kumar, Rui Shao, Zuopu Zhou, Leming Jiao, Jishen Zhang, Haiwen Xu, Yue Chen, Gan Liu, Dong Zhang, Xiaolin Wang, Bich-Yen Nguyen, Xiao Gong
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Autor:
Tianhua Ren, Junyong Wang, Annie Kumar, Kaizhen Han, Yuye Kang, Gong Zhang, Zhe Wang, Rupert Oulton, Goki Eda, Xiao Gong
Two-dimensional (2D) semiconductors have attracted great attention as a novel class of gain materials for low-threshold on-chip coherent light sources. Due to their atomically thin scale, these materials exhibit distinct gain characteristics and asso
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::baa9eaf5546b92a3d03b3ea0f6c69854
https://doi.org/10.21203/rs.3.rs-2312053/v1
https://doi.org/10.21203/rs.3.rs-2312053/v1
Autor:
Kaizhen Han, Chengkuan Wang, Xiao Gong, Z. H. Zhou, Annie Kumar, Jiuren Zhou, Yuye Kang, Chen Sun
Publikováno v:
IEEE Electron Device Letters. 42:1488-1491
In this letter, we demonstrate a complementary metal-oxide-semiconductor (CMOS) inverter comprising a germanium p-type field-effect transistor (Ge p-FET) and an amorphous indium-gallium-zinc-oxide n-type field-effect transistor ( $\alpha $ -IGZO n-FE
Autor:
Kaizhen Han, Gengchiau Liang, Zhigang Song, Sheng Luo, Chengkuan Wang, Shengqiang Xu, Eugene Y.-J. Kong, Yuye Kang, Weijun Fan, Xiao Gong, Annie Kumar
Publikováno v:
Nano Letters. 21:5555-5563
We demonstrate Ge0.95Sn0.05 p-channel gate-all-around field-effect transistors (p-GAAFETs) with sub-3 nm nanowire width (WNW) on a GeSn-on-insulator (GeSnOI) substrate using a top-down fabrication process. Thanks to the excellent gate control by empl
Autor:
Chengkuan Wang, Annie Kumar, Kaizhen Han, Chen Sun, Haiwen Xu, Jishen Zhang, Yuye Kang, Qiwen Kong, Zijie Zheng, Yuxuan Wang, Xiao Gong
Publikováno v:
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).