Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Annette Sandoval"'
Autor:
Anthony Rice, Christopher Tait, Stephen Lee, Julia Deitz, Mark Rodriguez, Wei Pan, Taisuke Ohta, Darrell Alliman, Gregory Peake, Annette Sandoval, Nichole Valdez, Paul Sharps
Publikováno v:
Proposed for presentation at the 2021 Materials Research Society Fall Meeting held December 6-8, 2021 in Boston, Massachusetts..
Autor:
Alejandro Grine, Darwin Serkland, Justin Schultz, Michael Wood, Patrick Finnegan, Scott Weatherred, Gregory Peake, Darrel Alliman, Annette Sandoval, Tongcang Li, Francis Robicheaux, Troy Seberson
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::677f361761770971ed57e63d0e84dcc6
https://doi.org/10.2172/1770715
https://doi.org/10.2172/1770715
Autor:
Paul Sharps, Alex W. Haas, Tansen Varghese, Richard G. Schwartz, Mark A. Stan, John Doman, Annette Sandoval, J. Hills, Cora Griego, A. Korostyshevsky, Allen L. Gray, J. R. Wilcox, Michele Turner, Jeffery L. Gray
Publikováno v:
2008 33rd IEEE Photovolatic Specialists Conference.
The performance of two and three-terminal solar cells under 13-sun AM1.5G illumination is reported. The solar cells are comprised of monolithically grown InGaP 2 and GaAs single junction cells. The two-terminal device consists of single junctions in
Autor:
J. Wood, J. Pappan, M.A. Stan, F. Newman, P. Sharps, G. Johnston, Daniel J. Aiken, B. Clevenger, R. Hoffman, E. Downard, J. Doman, J. Hills, A.B. Cornfeld, Annette Sandoval
Publikováno v:
2006 IEEE 4th World Conference on Photovoltaic Energy Conference.
This year Emcore expects to begin shipment of its BTJ and BTJM high efficiency triple junction (3J) solar cell products. The former is the 3J without a monolithic bypass diode and the latter with a monolithic bypass diode. A 1 sun AM0 efficiency of 2
Autor:
Richard Siergiej, Annette Sandoval, Michele Turner, Samuel D. Link, Tansen Varghese, Ian Aeby, Michael Dashiell, Gerald Girard, Hassan Ehsani, F. Newman, Diana Llera-Hurlburt, Scott Endicter, Joseph Fiedor
Publikováno v:
2006 IEEE 4th World Conference on Photovoltaic Energy Conference.
Yield data from a pilot-production run of thermophotovoltaic (TPV) devices are presented. A single lattice-mismatched 0.6 eV InGaAs epilayer device design was grown on 166 3-inch InP wafers by metalorganic vapor phase epitaxy (MOVPE) in a commercial
Autor:
F. Newman, B. Wernsman, Annette Sandoval, Michele Turner, Ian Aeby, J.N. Fiedor, R. J. Wehrer, Gerald Girard, Richard Siergiej, Tansen Varghese, J.P. Maranchi, Scott Endicter
Publikováno v:
2006 IEEE 4th World Conference on Photovoltaic Energy Conference.
Experimental results are presented for lattice-mismatched (LMM) In 0.8Ga0.2As0.76P0.24 and Al 0.07Ga0.255In0.675As quaternary materials used in thermophotovoltaic (TPV) devices. Epistructures were grown on 3-inch diameter InP substrates by metalorgan