Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Anneli Munkholm"'
Autor:
Edith Perret, G. B. Stephenson, Carol Thompson, Anneli Munkholm, Paul H. Fuoss, Matthew J. Highland, Dongwei Xu, Peter Zapol
Using in situ grazing-incidence x-ray scattering, we have measured the diffuse scattering from islands that form during layer-by-layer growth of GaN by metal-organic vapor phase epitaxy on the (1010) m-plane surface. The diffuse scattering is extende
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::76a699b425ffa25f3a84f3b12e2628dd
http://doc.rero.ch/record/306776/files/per_ids.pdf
http://doc.rero.ch/record/306776/files/per_ids.pdf
Autor:
M. Craven, Michael D. Camras, Andrew Y. Kim, Frank M. Steranka, Anneli Munkholm, W. Götz, S. Watanabe, G. Chen
Publikováno v:
physica status solidi (a). 205:1086-1092
The performance of III-nitride based high-power light emitting diodes (LEDs) is reviewed. Direct color high-power LEDs with 1 × 1 mm2 chip size in commercial LUXEON® Rebel packages are shown to exhibit external quantum efficiencies at a drive curre
Autor:
Albert V. Davydov, Alexander J. Shapiro, Safak Sayan, Igor Levin, Norman A. Sanford, Anneli Munkholm, Michael R. Krames, L. Wielunski, T. E. Madey
Publikováno v:
physica status solidi (c). 2:2783-2786
The refractive index and birefringence of InxGa1–xN films grown on GaN layers were measured by prism coupling used in conjunction with multilayer optical waveguide analysis. Samples with x = 0.036, 0.049, 0.060, and 0.066 were examined at the separ
Autor:
Dillon D. Fong, Orlando Auciello, Stephen K. Streiffer, Jeffrey A. Eastman, G. B. Stephenson, Paul H. Fuoss, M. V. Ramana Murty, M. E. M. Aanerud, Carol Thompson, Anneli Munkholm
Publikováno v:
Physica B: Condensed Matter. 336:81-89
As part of a program to understand and control the structure of ferroelectric thin films grown by metal organic vapor phase epitaxy (MOVPE), we have used X-ray scattering to observe the surface structure of PbTiO 3 films during and following growth.
Autor:
Jeffrey A. Eastman, Orlando Auciello, Paul T. Fini, James S. Speck, M. V. Ramana Murty, G. B. Stephenson, Steven P. DenBaars, Carol Thompson, Anneli Munkholm
Publikováno v:
Journal of Crystal Growth. 221:98-105
We present real-time X-ray scattering studies of the influence of silicon on the homoepitaxial growth mode of GaN grown by metal-organic vapor-phase epitaxy. Both annealing of Si-doped GaN and surface dosing of GaN with disilane are shown to change t
Publikováno v:
Journal of Applied Physics. 88:1389-1396
The high strengths of gold thin films on silicon substrates have been studied with particular reference to the possible effect of strain gradients. Wafer curvature/thermal cycling measurements have been used to study the strengths of unpassivated, ox
Publikováno v:
Physica B: Condensed Matter. 283:125-129
X-rays are used to determine the stress as a function of depth for five evaporated gold films of 0.8–2.5 μm thickness. The depth dependence is achieved by varying the incident angle of the X-rays, which affects the penetration depth of the X-rays
Autor:
James S. Speck, Paul T. Fini, Anneli Munkholm, Jeffrey A. Eastman, G. B. Stephenson, S. P. DenBaars, Orlando Auciello, Carol Thompson
Publikováno v:
Physica B: Condensed Matter. 283:217-222
Out-of-plane structures of the GaN (0 0 0 1) surface in the metal-organic chemical vapor deposition (MOCVD) environment have been determined using in situ grazing-incidence X-ray scattering. We measured 11 2 l crystal truncation rod intensities at a
Autor:
Jeffrey A. Eastman, Carol Thompson, James S. Speck, Paul T. Fini, Anneli Munkholm, Paul H. Fuoss, Orlando Auciello, G. Brian Stephenson, Steven P. DenBaars
Publikováno v:
MRS Bulletin. 24:21-25
Vapor-phase processes such as chemical vapor deposition (CVD) and reactive ion etching are the primary methods for the production-scale synthesis and processing of many high-quality thin-film materials. For example, these processes are widely used in
Autor:
Carol Thompson, G. R. Bai, Stephen K. Streiffer, G. B. Stephenson, Anneli Munkholm, Jeffrey A. Eastman, M. V. Ramana Murty, Orlando Auciello
Publikováno v:
Applied Physics Letters. 80:1809-1811
We present in situ surface x-ray scattering measurements of PbTiO3 epitaxy by metal–organic chemical-vapor deposition. Oscillations in crystal truncation rod intensity corresponding to layer-by-layer growth are observed under a variety of growth co