Real-time NO2 detection at ppb level with ZnO field-effect transistors

Autor: Edsger C. P. Smits, Anne-Marije Andringa, Johan Hendrik Klootwijk, Dago M. de Leeuw

Publikováno v: Sensors and actuators b-Chemical, 181(11), 668-673. Elsevier Science

We present a functional real-time NO2 sensor based on a ZnO field-effect transistor. The dynamic response of the sensor is calculated using a phenomenological charge trapping model, using only experimentally determined parameters. This analytical mod

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2c47e1ae3be60c9a23746d3968bcb6e8
https://hdl.handle.net/11370/5039d2e1-30e2-47dd-ac1c-fc79d90a176b

Dynamics of charge carrier trapping in NO2 sensors based on ZnO field-effect transistors

Autor: Anne-Marije Andringa, Nynke Vlietstra, Edsger C. P. Smits, Henrique L. Gomes, Dago M. de Leeuw, Paul W. M. Blom, M. Spijkman, Johan Hendrik Klootwijk

Publikováno v: Sensors and actuators b-Chemical, 171(27), 1172-1179. Elsevier Science
Repositório Científico de Acesso Aberto de Portugal
Repositório Científico de Acesso Aberto de Portugal (RCAAP)
instacron:RCAAP

Nitrogen dioxide (NO2) detection with ZnO field-effect transistors is based on charge carrier trapping. Here we investigate the dynamics of charge trapping and recovery as a function of temperature by monitoring the threshold voltage shift. The thres

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::19568426d2d179cdc54c8fcb5fd67873
https://doi.org/10.1016/j.snb.2012.06.062

Revealing buried interfaces to understand the origins of threshold voltage shifts in organic field-effect transistors

Autor: René A. J. Janssen, Anne-Marije Andringa, Simon G. J. Mathijssen, Dago M. de Leeuw, Paul A. van Hal, Martijn Kemerink, M. Spijkman, Iain McCulloch

Publikováno v: Advanced materials, 22(45), 5105-+. WILEY-V C H VERLAG GMBH
Advanced Materials, 22(45), 5105-5109. Wiley-VCH Verlag

The semiconductor of an organic field-effect transistor is stripped with adhesive tape, yielding an exposed gate dielectric, accessible for various characterization techniques. By using scanning Kelvin probe microscopy we reveal that trapped charges

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a66d69ae4e38bbb8511463a889dcdb3a
https://research.tue.nl/en/publications/c19d6bae-a706-460c-9763-388a95570ddf

Analysis of nanoporosity in moisture permeation barrier layers by electrochemical impedance spectroscopy

Autor: Alberto Perrotta, Jasper J. Michels, Santiago J. Garcia, Mariadriana Creatore, Anne-Marije Andringa

Publikováno v: ACS Applied Materials & Interfaces, 29, 7, 15968-15977
ACS Applied Materials & Interfaces, 7(29), 15968-15977. American Chemical Society

Water permeation in inorganic moisture permeation barriers occurs through macroscale defects/pinholes and nanopores, the latter with size approaching the water kinetic diameter (0.27 nm). Both permeation paths can be identified by the calcium test, i

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ace3dad1bd8301a61778ee1ebbea3046
http://resolver.tudelft.nl/uuid:5513da9c-7f0d-48dc-bc7b-1a79cac851cc

Localizing trapped charge carriers in NO2 sensors based on organic field-effect transistors

Autor: W. S. Christian Roelofs, Martijn Kemerink, Michael Sommer, Dago M. de Leeuw, Mukundan Thelakkat, Anne-Marije Andringa

Publikováno v: Applied Physics Letters, 101(15):153302
Applied Physics Letters, 101(15):153302, 1-5. American Institute of Physics

Field-effect transistors have emerged as NO2 sensors. The detection relies on trapping of accumulated electrons, leading to a shift of the threshold voltage. To determine the location of the trapped electrons we have delaminated different semiconduct

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a7cc1f5ce8a681090172740f5d03bd9f
https://research.rug.nl/en/publications/14ef5721-f4fa-4f41-958b-dc41f4d0f967