Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Anne-Marie Kelleher"'
Autor:
Conor O'Mahony, Ryan Sebastian, Fjodors Tjulkins, Derek Whelan, Andrea Bocchino, Yuan Hu, Joe O'Brien, Jim Scully, Margaret Hegarty, Alan Blake, Inès Slimi, A. James P. Clover, Alexander Lyness, Anne-Marie Kelleher
Publikováno v:
International Journal of Pharmaceutics. 637:122888
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1cc6018a6cd4b6120a5c818c93bdc30d
https://doi.org/10.1016/j.ijpharm.2023.122888
https://doi.org/10.1016/j.ijpharm.2023.122888
Autor:
S. Cian O'Mathuna, James F. Rohan, Ningning Wang, Margaret Hegarty, Anne-Marie Kelleher, Brice Jamieson, Finbarr Waldron, Joe O'Brien, Saibal Roy, Santosh Kulkarni, Declan P. Casey
Publikováno v:
ECS Transactions. 41:341-347
Microinductors were fabricated using electrodeposition for integration on semiconductor substrates. The process was optimised through validated models developed to focus on efficiency and footprint. Lithographic processing was performed to microfabri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::840ca0c65a4d9593ab8138a7ea4d48b8
https://doi.org/10.1149/1.3631510
https://doi.org/10.1149/1.3631510
Publikováno v:
ECS Transactions. 35:185-192
In this paper the authors discuss the issues surrounding the formation of ultrashallow n-type junctions in Ge. In general the n-type dopants are relatively difficult to activate and diffuse quickly, leading to high access resistances and limited capa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5372b8dc258ea1d181383599086aef06
https://doi.org/10.1149/1.3568860
https://doi.org/10.1149/1.3568860
Autor:
Ray Duffy, Vladimir Djara, Brendan McCarthy, Alan Blake, Michael Schmidt, Jim Scully, Anne-Marie Kelleher, Mary Anne White, Ran Yu, Maryam Shayesteh, Nikolay Petkov
Publikováno v:
ECS Transactions. 35:27-34
(100) germanium wafers were patterned by e-beam lithography with various exposure doses, in combination with dry etch, resulting in fin structures with widths in the range of approximately 20-150 nm with a high aspect ratio, running in either the [10
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efa9a3fa048f906de8ca6b8ac527c781
https://doi.org/10.1149/1.3568845
https://doi.org/10.1149/1.3568845
Autor:
Agham Posadas, Anne-Marie Kelleher, Alexander A. Demkov, Mary Anne White, Dan O'Connell, Ray Duffy, Michael Schmidt, Paul K. Hurley, Patrick Ponath
Publikováno v:
Journal of Vacuum Science & Technology B. 36:031206
Titanates exhibit electronic properties highly desirable for field effect transistors such as very high permittivity and ferroelectricity. However, the difficulty of chemically etching titanates hinders their commercial use in device manufacturing. H
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f328abd955d47c29fa5db7d06450e3b6
https://doi.org/10.1116/1.5026109
https://doi.org/10.1116/1.5026109
Autor:
Pedram Razavi, Richard Murphy, Mary White, Chi-Woo Lee, B. O'Neill, Anne-Marie Kelleher, Aryan Afzalian, Ran Yan, Alan Blake, Nima Dehdashti Akhavan, Brendan McCarthy, Isabelle Ferain, Jean-Pierre Colinge
Publikováno v:
Nature Nanotechnology. 5:225-229
All existing transistors are based on the use of semiconductor junctions formed by introducing dopant atoms into the semiconductor material. As the distance between junctions in modern devices drops below 10 nm, extraordinarily high doping concentrat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3354f8ff74991a25eeb405429d0523c0
https://doi.org/10.1038/nnano.2010.15
https://doi.org/10.1038/nnano.2010.15
Autor:
Maryam Shayesteh, Anne-Marie Kelleher, Ray Duffy, Mary Anne White, Michael Schmidt, Vladimir Djara
Publikováno v:
AIP Conference Proceedings.
The authors investigate F as a non-dopant co-implant to suppress P and As diffusion in Ge. F was placed either overlaying the dopant profile, or deeper to counteract the influence of end-of-range defects, which is a common ultra-shallow junction opti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5bdef0157ae399b3411d94a2747eb21
https://doi.org/10.1063/1.4766503
https://doi.org/10.1063/1.4766503
Autor:
B. O'Neill, Anne-Marie Kelleher, Mary White, Christopher W. Lee, Richard Murphy, Isabelle Ferain, Aryan Afzalian, Jean-Pierre Colinge, Alan Blake, Pedram Razavi, Ran Yan, Nima Dehdashti, Brendan McCarthy
Publikováno v:
2009 IEEE International SOI Conference.
We report the fabrication of junctionless SOI MOSFETs. Such devices greatly simplify processing thermal budget and behave as regular multigate SOI transistors.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1445c103998bde9c7e86d8d4c099997e
https://doi.org/10.1109/soi.2009.5318737
https://doi.org/10.1109/soi.2009.5318737
Autor:
Frank Clemens, Wolf Hartmann, J. Donnelly, Astrid Ullsperger, Alan Mathewson, B. O'Neill, Constantin Papadas, Markus Wegmann, Nikos Venios, Doerte Winkler, John Alderman, Anne-Marie Kelleher, Thomas Healy
Publikováno v:
The Disappearing Computer ISBN: 9783540727255
The Disappearing Computer
The Disappearing Computer
Most of everyday clothing consists of textile fibres woven together to produce a fabric. Their primary purpose is structural and aesthetic. Fibres can have added functionality by the integration of computing power into the material that forms them. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::320de461a4c1a38d79d27b771b7f7770
https://doi.org/10.1007/978-3-540-72727-9_12
https://doi.org/10.1007/978-3-540-72727-9_12
Autor:
Ran Yu, Michael Schmidt, Nikolay Petkov, Alan Blake, Anne-Marie Kelleher, Ray Duffy, Luis A. Marqués, Brendan McCarthy, Jim Scully, Lourdes Pelaz, Maryam Shayesteh, Mary Anne White
Publikováno v:
UVaDOC. Repositorio Documental de la Universidad de Valladolid
instname
instname
Producción Científica
The authors investigate the templated crystallization of thin-body Ge fin structures with high aspect ratios. Experimental variables include fin thickness and thermal treatments, with fin structures oriented in the 〈110
The authors investigate the templated crystallization of thin-body Ge fin structures with high aspect ratios. Experimental variables include fin thickness and thermal treatments, with fin structures oriented in the 〈110
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e7ae5155c7e8986360150ba5d652feea
https://doi.org/10.1063/1.3643160
https://doi.org/10.1063/1.3643160