Zobrazeno 1 - 10 of 47 pro vyhledávání: '"Anne Ziegler"'
4
Complex Band Structure Effects in k $\cdot$ p-Based Quantum Transport Simulations of p-Type Silicon Nanowire Transistors
Autor: Anne Ziegler, Mathieu Luisier
Publikováno v: IEEE Transactions on Electron Devices. 65:1298-1302
We investigate ultrascaled $\langle 100\rangle $ -, $\langle 110\rangle $ -, and $\langle 111\rangle $ -oriented p-type silicon nanowire transistors using a quantum transport simulator based on the: 1) six-band $\text{k}\cdot \text{p}$ method and 2)
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4c7089f72fd9a1777a83bfb690e48d4d
https://doi.org/10.1109/ted.2018.2808842
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6
A Nonparabolic Bandstructure Model for Computationally Efficient Quantum Transport Simulations
Autor: Mathieu Luisier, Martin Frey, Lee Smith, Anne Ziegler
Publikováno v: IEEE Transactions on Electron Devices
With the increasing focus on III–V materials as potential candidates for next-generation nanotransistors, advanced bandstructure models going beyond the parabolic band approximation are required to ensure accurate device simulations. For that purpo
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9c9db57117357b91c3c6f31fd5ea4e60
https://doi.org/10.1109/ted.2016.2542522
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7
Phonon confinement effects in diffusive quantum transport simulations with the effective mass approximation and k·p method
Autor: Anne Ziegler, Mathieu Luisier
Publikováno v: 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
Despite the continuous shrinking of the transistor dimensions, advanced modeling tools going beyond the ballistic limit of transport are still critically needed to ensure accurate device investigations. For that purpose we present here a straight-for
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::58bfb318374b6e013dea940344dbdb88
https://hdl.handle.net/20.500.11850/225283
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8
Drift-diffusion quantum corrections for In0.53Ga0.47As double gate ultra-thin-body FETs
Autor: Anne Ziegler, Mathieu Luisier, Andreas Schenk, P. Aguirre, Hamilton Carrillo-Nunez
Publikováno v: 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
With the growing interest in III-V-based nano-scale transistors as potential candidates for next-generation switches there is a need for efficient simulation tools capable to predict the impact of inherent quantum effects. In this paper we show how q
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d1a8c4703f8211881e17641f65d9138e
https://doi.org/10.1109/sispad.2016.7605146
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9
A phase-based amplitude regulation for gyroscope drive loops
Autor: T. Northemann, Anne Ziegler, Michael Maurer, Yiannos Manoli
Publikováno v: Procedia Engineering. 5:188-191
This paper presents a new amplitude regulation for gyroscopes based on phase-shifting. Instead of regulating the AC or DC value of the driving stage in order to maintain a constant primary oscillation, this concept introduces a tunable phase delay in
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ff7b318099def0ce410458b36619281d
https://doi.org/10.1016/j.proeng.2010.09.079
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10
FinFET to nanowire transition at 5nm design rules
Autor: Lee Smith, Anne Ziegler, Mathieu Luisier, Munkang Choi, Victor Moroz, Martin Frey
Publikováno v: 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
Semi-classical and quantum transport approaches are applied and compared to analyze the relative driving strength of nmos nanowires compared to FinFETs at 5nm design rules. Both transport approaches show better-than-expected nanowire drive current. T
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6aa9c7ca6ec54b402aa13176c81500a4
https://doi.org/10.1109/sispad.2015.7292307
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