Zobrazeno 1 - 10 of 199 pro vyhledávání: '"Anne Ziegler"'
1
Webster Booth & Anne Ziegler: Excerpts from Gramophone and Discography
Autor: Jean Collen
The first part of the book is a compilation of reviews and articles extracted from The Gramophone online archive, referring to the recordings of Webster Booth and/or Anne Ziegler. The second part contains my own compilation of a discography of solo a
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::21097f4e45614e080d9c65f1c8f2c039
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2
Webster Booth & Anne Ziegler: Excerpts from Gramophone and Discography
Autor: Collen, Jean
The first part of the book is a compilation of reviews and articles extracted from The Gramophone online archive, referring to the recordings of Webster Booth and/or Anne Ziegler. The second part contains my own compilation of a discography of solo a
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::778e7539487f6b2c7704064dab191c88
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6
Complex Band Structure Effects in k $\cdot$ p-Based Quantum Transport Simulations of p-Type Silicon Nanowire Transistors
Autor: Anne Ziegler, Mathieu Luisier
Publikováno v: IEEE Transactions on Electron Devices. 65:1298-1302
We investigate ultrascaled $\langle 100\rangle $ -, $\langle 110\rangle $ -, and $\langle 111\rangle $ -oriented p-type silicon nanowire transistors using a quantum transport simulator based on the: 1) six-band $\text{k}\cdot \text{p}$ method and 2)
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4c7089f72fd9a1777a83bfb690e48d4d
https://doi.org/10.1109/ted.2018.2808842
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8
A Nonparabolic Bandstructure Model for Computationally Efficient Quantum Transport Simulations
Autor: Mathieu Luisier, Martin Frey, Lee Smith, Anne Ziegler
Publikováno v: IEEE Transactions on Electron Devices
With the increasing focus on III–V materials as potential candidates for next-generation nanotransistors, advanced bandstructure models going beyond the parabolic band approximation are required to ensure accurate device simulations. For that purpo
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9c9db57117357b91c3c6f31fd5ea4e60
https://doi.org/10.1109/ted.2016.2542522
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9
Phonon confinement effects in diffusive quantum transport simulations with the effective mass approximation and k·p method
Autor: Anne Ziegler, Mathieu Luisier
Publikováno v: 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
Despite the continuous shrinking of the transistor dimensions, advanced modeling tools going beyond the ballistic limit of transport are still critically needed to ensure accurate device investigations. For that purpose we present here a straight-for
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::58bfb318374b6e013dea940344dbdb88
https://hdl.handle.net/20.500.11850/225283
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10
Drift-diffusion quantum corrections for In0.53Ga0.47As double gate ultra-thin-body FETs
Autor: Anne Ziegler, Mathieu Luisier, Andreas Schenk, P. Aguirre, Hamilton Carrillo-Nunez
Publikováno v: 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
With the growing interest in III-V-based nano-scale transistors as potential candidates for next-generation switches there is a need for efficient simulation tools capable to predict the impact of inherent quantum effects. In this paper we show how q
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d1a8c4703f8211881e17641f65d9138e
https://doi.org/10.1109/sispad.2016.7605146
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