Zobrazeno 1 - 10
of 130
pro vyhledávání: '"Anne S. Verhulst"'
Publikováno v:
Communications Physics, Vol 4, Iss 1, Pp 1-10 (2021)
The ferroelectric field-effect transistor, which has attracted much attention for application as both a highly energy-efficient logic device and a non-volatile memory device, has often been studied within the framework of equilibrium thermodynamics.
Externí odkaz:
https://doaj.org/article/5e1bcda7f5bf4432b6d182bb7babf59f
Autor:
Jasper Bizindavyi, Anne S. Verhulst, Quentin Smets, Devin Verreck, Bart Soree, Guido Groeseneken
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 633-641 (2018)
Discrepancies exist between the theoretically predicted and experimentally measured performance of band-to-band tunneling devices, such as Esaki diodes and tunnel field-effect transistors (TFETs). We resolve this discrepancy for highly-doped, direct-
Externí odkaz:
https://doaj.org/article/86d17f8e8f43468eb80f4139ffe8fbdf
Autor:
Devin Verreck, Anne S. Verhulst, Yang Xiang, Dmitry Yakimets, Salim El Kazzi, Bertrand Parvais, Guido Groeseneken, Nadine Collaert, Anda Mocuta
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 658-663 (2018)
Dopant pockets in combination with a III-V heterostructure have become a staple in simulations of tunnel field-effect transistors (TFET) to achieve acceptable on-currents (ION) and to break the ION-subthreshold swing trade-off in pTFETs. Questions on
Externí odkaz:
https://doaj.org/article/709d3d9d18f44de7bb0fffa8ea46a664
Publikováno v:
IEEE Sensors Journal. 22:5732-5742
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08770a68bedf16b2c09438761a17f42c
https://doi.org/10.1109/jsen.2022.3149345
https://doi.org/10.1109/jsen.2022.3149345
Autor:
S. R. C. McMitchell, L. Di Piazza, B. Kaczer, Yusuke Higashi, Barry O'Sullivan, Anne S. Verhulst, Nicolo Ronchi, K. Banerjee, M. Suzuki, Dimitri Linten, J. Van Houdt
Publikováno v:
IEEE Transactions on Electron Devices. 67:4911-4917
Ferroelectric (FE)-HfO2-based FETs (FEFETs) are one of the most promising candidates for emerging memories. However, the FE material suffers from a unique reliability phenomenon known as imprint: the coercive voltage shifts during data retention, whi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e62fa2c96854aa569950b8e7fc3db67
https://doi.org/10.1109/ted.2020.3025846
https://doi.org/10.1109/ted.2020.3025846
Autor:
Sergiu Clima, Anne S. Verhulst, Pratik Bagul, Brecht Truijen, Sean R. C. McMitchell, Ingrid De Wolf, Geoffrey Pourtois, Jan Van Houdt
Publikováno v:
IEEE transactions on electron devices
Ferroelectrics (FEs) are increasingly used in nonvolatile memory applications. However, the impact of the electric dipole switching on its material parameters, in particular on the dielectric response, is not fully understood. In this work, an analyt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e194e0e0010165f8e5c058f14eeefdcb
Autor:
Koen Martens, David Barge, Lijun Liu, Sybren Santermans, Colin Stoquart, Jacobus Delport, Kherim Willems, Dino Ruic, Sanjin Marion, Juliette Gevers, Bert Du Bois, Alexandru Andrei, Liesbet Lagae, Mark Veugelers, Anne S. Verhulst, Simone Severi, Pol Van Dorpe
ispartof: 2022 INTERNATIONAL ELECTRON DEVICES MEETING, IEDM ispartof: International Electron Devices Meeting (IEDM) location:CA, San Francisco date:3 Dec - 7 Dec 2022 status: published
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::be4693e81b0148669dfe4f2842086193
https://lirias.kuleuven.be/handle/20.500.12942/721897
https://lirias.kuleuven.be/handle/20.500.12942/721897
Publikováno v:
Communications Physics
Communications Physics, Vol 4, Iss 1, Pp 1-10 (2021)
Communications Physics, Vol 4, Iss 1, Pp 1-10 (2021)
At the core of the theoretical framework of the ferroelectric field-effect transistor (FeFET) is the thermodynamic principle that one can determine the equilibrium behavior of ferroelectric (FERRO) systems using the appropriate thermodynamic potentia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6ca53e5f62a3c7058a4b5a5a0b560d08
https://hdl.handle.net/10067/1790050151162165141
https://hdl.handle.net/10067/1790050151162165141
Autor:
Seonghoon Jin, Fabrizio Bonani, Anne S. Verhulst, Sung-Min Hong, Stephen M. Cea, Christoph Jungemann, Victor Moroz, Xiaoyan Liu, Elena Gnani
Technology computer-aided design (TCAD) is an integral part of the development process of semiconductor technologies and devices, a field which has become increasingly complex and heterogeneous. Processing of integrated circuits requires nowadays ove
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::418cf71a6239edf225f2c34277ca4ed1
http://hdl.handle.net/11585/869307
http://hdl.handle.net/11585/869307
Publikováno v:
IEEE transactions on electron devices
To improve the interpretation of the tunnel field-effect transistor (TFET) measurements, we theoretically identify the signatures of the ballistic band-tail (BT) tunneling (BTT) current in the transfer and output characteristics of the TFETs. In part
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5d3d55709968591620815aeac99ddab8
https://lirias.kuleuven.be/handle/123456789/659249
https://lirias.kuleuven.be/handle/123456789/659249