Controlling electrical and optical properties of zinc oxide thin films grown by thermal atomic layer deposition with oxygen gas

Autor: Tai Nguyen, Noureddine Adjeroud, Mael Guennou, Jérôme Guillot, Yves Fleming, Anne-Marie Papon, Didier Arl, Kevin Menguelti, Raoul Joly, Narciso Gambacorti, Jérôme Polesel-Maris

Publikováno v: Results in Materials, Vol 6, Iss , Pp 100088- (2020)

The preparation of ZnO thin films with controlled electrical resistivity and optical properties is often challenged by the presence of defects, such as oxygen vacancies or interstitial zinc. Here, we investigate the material properties of ZnO polycry

Externí odkaz: https://doaj.org/article/307814817fca4ed0918bc3adea377b31

Synthesis of In-Plane Oriented Tin Sulfides by Organosulfur-Mediated Sulfurization of Ultrathin SnO2 Films

Autor: Bhobnibhit Chatmaneerungcharoen, Mathias Fraccaroli, François Martin, Cyril Guedj, Emmanuel Nolot, Denis Rouchon, Nicolas Vaxelaire, Roselyne Templier, Adeline Grenier, Anne-Marie Papon, Hervé Roussel, Laetitia Rapenne, Hubert Renevier, Stéphane Cadot

Publikováno v: Chemistry of Materials. 34:5842-5851

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c0ee7b38925a12f35c395727231e60e3
https://doi.org/10.1021/acs.chemmater.2c00567

Confined selective lateral epitaxial growth of 16-nm thick Ge nanostructures on SOI substrates: Advantages and challenges

Autor: Rami Khazaka, Y. Bogumilowicz, Bernard Previtali, Sylvain David, Denis Rouchon, Nicolas Chevalier, Sylvain Maitrejean, Zdenek Chalupa, Hervé Boutry, Anne Marie Papon, V. Lapras

Publikováno v: Applied Surface Science
Applied Surface Science, Elsevier, 2018, 445, pp.77-80. ⟨10.1016/j.apsusc.2018.03.104⟩
Applied Surface Science, 2018, 445, pp.77-80. ⟨10.1016/j.apsusc.2018.03.104⟩

In this contribution, we report on the growth of Ge inside extremely thin 16-nm thick cavities through selective lateral growth of Ge on 300 mm silicon-on-insulator (0 0 1) substrates. We showed that the density of defects depends on the cavity shape

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4466803858aeb20876c6e277df144280
https://doi.org/10.1016/j.apsusc.2018.03.104

NEG thin films for under controlled atmosphere MEMS packaging

Autor: Xavier Baillin, Eugénie Martinez, Pierre Nicolas, Lionel Tenchine, Christel Faure, Anne-Marie Papon

Publikováno v: Sensors and Actuators A: Physical. 172:233-239

Non-evaporable getter (NEG) thin films for residual gases control in micro-electro-mechanical systems (MEMS) cavities after sealing are considered. For this study, several getters are deposited and analyzed in terms of sorption performances, microstr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cd8bc856505a0cb192252a444ab874bd
https://doi.org/10.1016/j.sna.2011.05.033

(Invited) SOI-Type Bonded Structures for Advanced Technology Nodes

Autor: Isabelle Huyet, Cyril Guedj, Jean-Michel Hartmann, R. Cipro, Pascal Besson, Marie-Christine Roure, Mickael Martin, Thomas Signamarcheix, Virginie Loup, Christelle Veytizou, Christophe Figuet, Walter Schwarzenbach, Maurice Rivoire, Catherine Euvrard-Colnat, Anne-Marie Papon, Julien Duvernay, Franck Bassani, J. Widiez, Daniel Delprat, Thierry Baron, Aurélien Seignard, Yann Bogumilowicz, Frédéric Gonzatti, E. Augendre, Sébastien Sollier, Frederic Mazen

Publikováno v: ECS Transactions
ECS Transactions, Electrochemical Society, Inc., 2014, 64 (5), pp.35-48. ⟨10.1149/06405.0035ecst⟩
ECS Transactions, 2014, 64 (5), pp.35-48. ⟨10.1149/06405.0035ecst⟩

Bulk silicon device technologies are reaching fundamental scaling limitations. The 28nm and 22nm technology nodes have seen the introduction of Ultra-Thin Body and Buried Oxide Fully Depleted SOI (UTBB-FDSOI) [1] and FinFETs [2], respectively. Fully

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::caa78b61c4d01a6c5a812adac15520b5
https://hal.univ-grenoble-alpes.fr/hal-01991972