Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Anne, Zeng"'
Autor:
Jesse J, Jung, Anne, Zeng, Rahul, Komati, Anna G, Mackin, Dimitra, Skondra, Yoshihiro, Yonekawa, Mitchell S, Fineman, Isaac, Ezon, Soraya, Rofagha, Quan V, Hoang
Publikováno v:
RETINAL Cases & Brief Reports.
To report the findings of a hyperreflective nodular epiretinal gliosis observed with optical coherence tomography (OCT) presumed to be due to subclinical hyaloidal traction causing Mϋller cell cone gliosis.Retrospective, observational case series.Si
Autor:
Jesse J. Jung, Jonathan S. Chang, Patrick R. Oellers, Mohsin H. Ali, Brian K. Do, Joseph J. Tseng, Roberto Roizenblatt, Rajeev H. Muni, Christina Y. Weng, Zackery B. Oakey, Sean W. Tsao, Soraya Rofagha, Xavier Chan, Quan V. Hoang, Daniel Russ Richardson, Jaime Toledo-Corral, Hemang K. Pandya, Victor T. Copeland, Gowtham Jonna, Sarwar Zahid, James Lin, Aristomenis Thanos, Isaac Ezon, Asadolah Movahedan, Sidney A. Schechet, Mitul C. Mehta, Hesham Hamli, Sidharth Puri, Chirag D. Jhaveri, Jamison R. Ridgeley, Alan T. Sheyman, Jonathan Hu, Stephanie Y. Lu, Andrew W. Browne, Lynn L. Huang, Yewlin E. Chee, Solly Elmann, Khurram M. Chaudhary, Nitish Mehta, Philip Kurochkin, Genti Gjyzeli, Michael M. Altaweel, T. Michael Nork, Anne Zeng, Isabella Q. Loh, Hong Yi Lin
Publikováno v:
Ophthalmology. Retina
In this retrospective, multicenter study of 261 eyes (259 patients), patients who underwent rhegmatogenous retinal detachment repair during the coronavirus disease 2019 (COVID-19) post-lockdown period experienced an additional 22-day delay, leading t
Autor:
Sarah Goglin, Anne Zeng, Ron Strauss, Jesse J. Jung, John A. Gonzales, Varun K. Pawar, Richard K. Imes
Publikováno v:
Journal of vitreoretinal diseases, vol 4, iss 3
J Vitreoretin Dis
J Vitreoretin Dis
Purpose: This case report discusses an atypical case of cytomegalovirus (CMV) retinal necrosis with panretinal occlusive vasculopathy in a 77-year-old man who was immunosuppressed following treatment for giant cell arteritis (GCA). Methods: A case re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::256cb2438f396c91643ec14c716a20bb
https://escholarship.org/uc/item/46j7j51r
https://escholarship.org/uc/item/46j7j51r
Autor:
Quan V Hoang, Anne Zeng, Michael H. Chen, Kenneth M. Marion, Srinivas R. Sadda, Daryle Jason G. Yu, Jesse J. Jung, Yue Shi, Marco Nassisi
Publikováno v:
Ophthalmol Retina
PURPOSE: To evaluate the effect of averaging en-face optical coherence tomography angiography (OCTA) images on quantitative measurements of the retinal microvasculature and their correlation to diabetic retinopathy (DR) disease severity. DESIGN: Cros
Autor:
Wei Wang, Victor F Lundin, Ivan Millan, Anne Zeng, Xinyu Chen, Jie Yang, Elizabeth Allen, Ningna Chen, Gillian Bach, Andrew Hsu, Michael T Maloney, Mridu Kapur, Yanmin Yang
Publikováno v:
PLoS ONE, Vol 7, Iss 4, p e33094 (2012)
In neurons, a highly regulated microtubule cytoskeleton is essential for many cellular functions. These include axonal transport, regional specialization and synaptic function. Given the critical roles of microtubule-associated proteins (MAPs) in mai
Externí odkaz:
https://doaj.org/article/fd2e6e4ed71c4725a952797625b3aa41
Publikováno v:
Solid-State Electronics. 49:1017-1028
In this work, we present the characterization of electron transport in 4H and 6H–SiC inversion layers with the development of a physics-based, 2-D quantum-mechanical model to explain the I DS – V GS , g m – V GS device electrical characteristic
Publikováno v:
Solid-State Electronics. 46:1579-1582
In this paper the interface trap densities (Dit) of 4H and 6H-SiC MOSFETs in the subthreshold region have been studied. Interface trap densities in this region were extracted as a function of trap energy (ET) from the transfer characteristics. We sho
Publikováno v:
International Semiconductor Device Research Symposium, 2003.
In this paper, we study about the interface charges on the operation of 4H silicon carbide static induction transistors. The structure of SIT provides high breakdown voltage and high current density between the source and drain terminals. Influence o
Autor:
Yu Anne Zeng, Marvin H. White
Publikováno v:
International Semiconductor Device Research Symposium, 2003.
This paper presents, a physically based inversion layer electron mobility model which takes into account the combined effects of surface roughness and coulomb scattering the two main mechanisms limiting the electron mobility in SiC MOSFETs. The MOSFE
Publikováno v:
International Semiconductor Device Research Symposium, 2003; 2003, p134-135, 2p