Výsledky vyhledávání - "Anna W. Topol"

Promoting Economic Development and Solving Societal Issues Within Connected Industries Ecosystems in Society 5.0

Publikováno v: Lecture Notes in Networks and Systems ISBN: 9783030806231
AHFE (13)

In Society 5.0 humans have access to intelligent tools, enabling them to create and capture value directly in new communities, networks, and ecosystems. In this study, we investigate the benefits of such value-driven ecosystems. We share our perspect

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a068e7db868de93b24fbcc3403040b5e
https://doi.org/10.1007/978-3-030-80624-8_22

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Three-dimensional silicon integration

Autor: A. M. Stephens, P.S. Andry, R. Horton, Sri M. Sri-Jayantha, Steven L. Wright, Katsuyuki Sakuma, Cornelia K. Tsang, Mario J. Interrante, John U. Knickerbocker, B. C. Webb, Edmund J. Sprogis, Chirag S. Patel, R. Sirdeshmukh, Anna W. Topol, B. Dang, Robert J. Polastre

Publikováno v: IBM Journal of Research and Development. 52:553-569

Three-dimensional (3D) silicon integration of active devices with through-silicon vias (TSVs), thinned silicon, and silicon-to-silicon fine-pitch interconnections offers many product benefits. Advantages of these emerging 3D silicon integration techn

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ab780d36783610051083c9e1bc75a6a1
https://doi.org/10.1147/jrd.2008.5388564

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Overlay as the key to drive wafer scale 3D integration

Autor: Kevin Belote, Anna W. Topol, David J. Frank, Steven E. Steen, Douglas Charles Latulipe, Dominick Posillico

Publikováno v: Microelectronic Engineering. 84:1412-1415

3D integration is the stacking of multiple active device layers (with or without interconnecting metal lines) to form a more complex integrated circuit or to provide a new architectural venue. There are many different techniques to accomplish the sta

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::56308854449ed857ddda0b3c8f806f14
https://doi.org/10.1016/j.mee.2007.01.231

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Three-dimensional integrated circuits

Autor: K. W. Guarini, Arvind Kumar, David J. Frank, Anna W. Topol, Steven E. Steen, A. M. Young, D.C. La Tulipe, G. U. Singco, Meikei Ieong, L. Shi, K. Bernstein

Publikováno v: IBM Journal of Research and Development. 50:491-506

Three-dimensional (3D) integrated circuits (ICs), which contain multiple layers of active devices, have the potential to dramatically enhance chip performance, functionality, and device packing density. They also provide for microchip architecture an

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3ceea4d757148f5e2d2297fabb9d3492
https://doi.org/10.1147/rd.504.0491

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Transistor scaling with novel materials

Autor: Meikei Ieong, D.V. Singh, Victor Chan, Vijay Narayanan, Anna W. Topol, Zhibin Ren

Publikováno v: Materials Today. 9:26-31

Complementary metal-oxide-semiconductor (CMOS) transistor scaling will continue for at least another decade. However, innovation in transistor structures and integration of novel materials are needed to sustain this performance trend. Here we discuss

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::958fb6cb1486af8e4e298146e7a879c9
https://doi.org/10.1016/s1369-7021(06)71540-1

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Hybrid lithography: The marriage between optical and e-beam lithography. A method to study process integration and device performance for advanced device nodes

Autor: Sampath Purushothaman, Steven E. Steen, Lidija Sekaric, John M. Hergenrother, J. Patel, Inna V. Babich, James P. Doyle, Mary Beth Rothwell, Michael J. Rooks, Jim R. Brancaccio, Roy Yu, Ron Nunes, J.J. Bucchignano, Anna W. Topol, R. Viswanathan, David M. Fried, Sharee J. McNab

Publikováno v: Microelectronic Engineering. 83:754-761

Moore's law continues to prescribe ever smaller device dimensions with each new device node. While the new device nodes are scheduled at even pace, the innovation required to obtain commensurate device performance is greater with every device node. T

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a6c9f53250038836d367bb1ac0a9f9e5
https://doi.org/10.1016/j.mee.2006.01.181

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Chemical Vapor Deposition of ZnS:Mn for Thin-Film Electroluminescent Display Applications

Autor: Christopher N. King, Anna W. Topol, Karl W. Barth, Kathleen Dunn, Katharine Dovidenko, Richard T. Tuenge, Guillermo Nuesca, Alain E. Kaloyeros, Brian K. Taylor

Publikováno v: Journal of Materials Research. 19:697-706

Results are presented from a systematic investigation to design and optimize a low-pressure chemical vapor deposition (CVD) process for manganese-doped zinc sulfide (ZnS:Mn) thin films for electroluminescent (EL) device applications. The CVD process

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8e44713d1e47507a1d8767415ac39635
https://doi.org/10.1557/jmr.2004.19.3.697

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Blue- and green-emitting SrS:Cu electroluminescent devices deposited by the atomic layer deposition technique

Autor: E. Soininen, Karl W. Barth, Timo Sajavaara, Jarkko Ihanus, Juhani Keinonen, Alain E. Kaloyeros, Mikko Ritala, Markku Leskelä, William Harris, Anna W. Topol, Wounjhang Park

Publikováno v: Journal of Applied Physics. 94:3862-3868

Observed structural, compositional, and optical differences between blue- and green-emitting SrS:Cu thin films deposited by the atomic layer deposition technique were studied. The use of hydrogen in the deposition process resulted in green-emitting e

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0e33434b69b90b3571af13ba577a085a
https://doi.org/10.1063/1.1603349

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In Situ Pulsed Deposition Studies of Ce ( tmhd ) 4 on SrS Surfaces for Thin Film Electroluminescent Flat Panel Display Applications

Autor: Denis Endisch, Janice E. Lau, Anna W. Topol, Alain E. Kaloyeros, Gregory G. Peterson, Mark Delarosa, Christopher N. King, Karl W. Barth, Richard T. Tuenge

Publikováno v: Journal of The Electrochemical Society. 145:4271-4276

In this paper, results are presented from a systematic investigation which aimed to evaluate the performance and efficiency of tetrakis(2,2,6,6-tetramethyl-3,5-heptadionato)cerium(IV), or Ce(tmhd) 4 , as the cerium dopant source in the atomic layer e

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::08003b9d88f5d99e579ff5a75184d176
https://doi.org/10.1149/1.1838950

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