Zobrazeno 1 - 10
of 58
pro vyhledávání: '"Anna V. Bugakova"'
Publikováno v:
2023 5th International Youth Conference on Radio Electronics, Electrical and Power Engineering (REEPE).
Publikováno v:
IEEE Transactions on Automation Science and Engineering. :1-10
Publikováno v:
2022 International Conference on Actual Problems of Electron Devices Engineering (APEDE).
Publikováno v:
IEEE Sensors Journal. 20:11400-11404
The discrete sensors of continuous physical quantities are widely used in various technical systems. Real sensors have a considerable inertia and they operate in the conditions of random noises, therefore, they include the analog-to-digital interface
Autor:
Oleg Dvornikov, Nikolay N. Prokopenko, S. A. Movchan, Valentin L. Dziatlau, Anna V. Bugakova, Vladimir A. Tchekhovski
Publikováno v:
IEEE Transactions on Nuclear Science. 66:2305-2311
New structured array (SA) MH2XA020 and the way of designing nuclear electronic integrated circuits (ICs) based on it are considered. The SA MH2XA020 contains eight readout channels. Each channel includes a charge-sensitive amplifier (CSA), an amplifi
Autor:
Yuriy I. Ivanov, Darya Yu. Denisenko, Nikolay N. Prokopenko, Anna V. Bugakova, Leontiy K. Samoylov
Publikováno v:
2021 International Conference on Electrical Engineering and Photonics (EExPolytech).
Autor:
Nikolay N. Prokopenko, Vladislav E. Chumakov, Darya Yu. Denisenko, Nikolay V. Butyrlagin, Anna V. Bugakova
Publikováno v:
EWDTS
Current mirror (CMs) are the basis of many analog integrated circuits. In this case, the systematic component of the zero bias voltage and the input common-mode rejection ratio of operational amplifiers, comparators, etc. largely depends on the curre
Publikováno v:
EWDTS
This paper proposes operational amplifier’s (Op-Amps) architectures based on complementary field-effect transistors with p-n junction (CJFETs), in which the effect of channel length modulation on the systematic component of the Op-Amp’s zero offs
Design of Low-Temperature and Radiation-Hardened JFET Direct Coupled Op-Amps without Current Mirrors
Publikováno v:
ECCTD
The offset voltage (V off ) of the BJT and CMOS two-stage operational amplifiers (Op-Amps) substantially depends on the numerical values (differences from unit) from the current ratio (K i ≈1) of the current mirrors (CM). The CM parameter is also i
Autor:
Anna V. Bugakova, Nikolay N. Prokopenko, Oleg Dvornikov, Vladimir A. Tchekhovski, Valentin L. Dziatlau
Publikováno v:
EWDTS
The current-voltage curves (CVCs) of silicon p-JFET and n-JFET, measured in the range of drain currents of about 60 dB, are considered. To describe the CVCs of the JFET in micromode, that is for the drain currents less than 1 μA, it is proposed to u