Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Anna Tchikoulaeva"'
Publikováno v:
Extreme Ultraviolet (EUV) Lithography XI.
As extreme ultraviolet lithography (EUVL) enters high volume manufacturing (HVM), the integrated circuit (IC) industry considers actinic patterned mask inspection (APMI) to be the last major EUV mask infrastructure gap. For over 20 years, there have
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::902240b92453ecda54a19c9726c132fe
https://doi.org/10.1117/12.2557858
https://doi.org/10.1117/12.2557858
Autor:
Anna Tchikoulaeva, Yulin Zhang, Christian Holfeld, Steffen Loebeth, Heiko Wagner, Takenori Katoh, Koichi Moriizumi, Stephan Melzig, Shinichi Tanabe
Publikováno v:
SPIE Proceedings.
Traditionally, product development for reticle defect inspection mostly addressed operational requirements of the mask shops with highly individualized manufacturing. As a result, limited automation capability was available as compared to the standar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60801e34a993408a9830fe276b71ca1c
https://doi.org/10.1117/12.2014480
https://doi.org/10.1117/12.2014480
Autor:
Tsuneo Terasawa, Ichiro Mori, Soichi Inoue, Haruhiko Kusunose, Kiwamu Takehisa, Tomohiro Suzuki, Hiroki Miyai, Hidehiro Watanabe, Anna Tchikoulaeva, Takeshi Yamane
Publikováno v:
Extreme Ultraviolet (EUV) Lithography IV.
The availability of actinic blank inspection is one of the key milestones for EUV lithography on the way to high volume manufacturing. Placed at the very beginning of the mask manufacturing flow, blank inspection delivers the most critical data set f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea3bab21b72e31fffc6e89191b9b11c9
https://doi.org/10.1117/12.2011776
https://doi.org/10.1117/12.2011776
Autor:
Karsten Bubke, Angeline Ho, Byoung Il Choi, Guoxiang Ning, Christian Holfeld, Martin Sczyrba, Andre Holfeld, Soon Yoeng Tan, Anna Tchikoulaeva
Publikováno v:
SPIE Proceedings.
Reticles are contaminated during its lifetime and can catch particles as large as several tens of microns. Such defects on the backside of photomasks are usually considered as uncritical and thus do not receive much attention. Backside defects are ou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79ef06591f412068f61a0d6f3ee3723e
https://doi.org/10.1117/12.899127
https://doi.org/10.1117/12.899127
Autor:
Fang Hong Gn, Guoxiang Ning, Yee Ta Ngow, Sia Kim Tan, Anna Tchikoulaeva, Byoung Il Choi, Christian Holfeld
Publikováno v:
SPIE Proceedings.
Reticle process of record (POR) sometimes needs fine tuning for some reasons such as multiple layer process, better critical dimension uniformity (CDU) or new etch chamber. The sidewall angle and corner rounding will be varied due to the reticle proc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf930fdd11c1aeb7963897c7ccea1ad5
https://doi.org/10.1117/12.898801
https://doi.org/10.1117/12.898801
Publikováno v:
SPIE Proceedings.
In our paper we make an analysis of conditions for the haze development on photomask fabricated on Mo-Si containing substrates. We bring in focus cases of haze formation on masks with intrinsically very low contaminants level and being exposed in ver
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a44e355ad2d219ffa0acbe88f7cc4b3
https://doi.org/10.1117/12.864478
https://doi.org/10.1117/12.864478
Publikováno v:
SPIE Proceedings.
We describe the imaging and characterization of native defects on a full field extreme ultraviolet (EUV) mask, using several reticle and wafer inspection modes. Mask defect images recorded with the SEMATECH Berkeley Actinic Inspection Tool (AIT), an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea9e180c14adef18bd3da5d6d7de1e57
https://doi.org/10.1117/12.846670
https://doi.org/10.1117/12.846670
Autor:
Carol Boye, Obert Wood, Christian Holfeld, Bruno La Fontaine, Paul Ackmann, Sterling G. Watson, Uzodinma Okoroanyanwu, Karsten Bubke, Jan Hendrik Peters, Sudhar Raghunathan, Bo Mu, Isaac Lee, Phillip Lim, Anna Tchikoulaeva, Sumanth Kini
Publikováno v:
SPIE Proceedings.
This paper assesses the readiness of EUV masks for pilot line production. The printability of well characterized reticle defects, with particular emphasis on those reticle defects that cause electrical errors on wafer test chips, is investigated. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52270188443acf2f68954b5b3bdec1fb
https://doi.org/10.1117/12.847348
https://doi.org/10.1117/12.847348
Publikováno v:
SPIE Proceedings.
Reticle defectivity has been a widely discussed topic in the last few years primarily due to ongoing haze issues but also because of the increasing number of the qualification methods available in the fab. Mask shops are taking a closer look at the a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c452b563d145d62bb220574c3967117
https://doi.org/10.1117/12.834830
https://doi.org/10.1117/12.834830
Autor:
S. Fan, Gregory McIntyre, Hiroyuki Mizuno, Tom Wallow, Uzodinma Okoroanyanwu, Chiew-seng Koay, John C. Arnold, D. Horak, Martin Burkhardt, Obert R. Wood, Bruno La Fontaine, Sudhar Raghunathan, Matthew E. Colburn, Chen Jim C, Anna Tchikoulaeva, Karen Petrillo, Bala S. Haran, Yunfei Deng, Yunpeng Yin
Publikováno v:
Alternative Lithographic Technologies.
On the road to insertion of extreme ultraviolet (EUV) lithography into production at the 16 nm technology node and below, we are testing its integration into standard semiconductor process flows for 22 nm node devices. In this paper, we describe the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0a9c66e052515ffc7f144e52a7fac5b
https://doi.org/10.1117/12.814379
https://doi.org/10.1117/12.814379