Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Anna Nirschl"'
Autor:
Anna Nirschl, Dominique Bougeard, Matthias Sabathil, Alvaro Gomez-Iglesias, Jürgen Off, Georg Hartung
Publikováno v:
physica status solidi (a). 211:2509-2513
The temperature dependence of the internal quantum efficiency (IQE) of blue InGaN-based light emitting diodes is analyzed both experimentally and theoretically with a drift-diffusion transport model. A high-performance reference structure and two imp
Autor:
Michael Binder, Hans-Jürgen Lugauer, Ines Pietzonka, Bastian Galler, Dominique Bougeard, Anna Nirschl, Roland Zeisel, Marina Schmid, Matthias Sabathil
Recent experimental investigations on the reduction of internal quantum efficiency with increasing current density in (AlInGa)N quantum well structures show that Auger recombination is a significant contributor to the so-called "droop" phenomenon. Us
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::10ed4bc8913b784291008b6c83cb813d
https://epub.uni-regensburg.de/33365/
https://epub.uni-regensburg.de/33365/
Autor:
Bastian Galler, Thomas Hager, Manfred Binder, Dominique Bougeard, Hans-Juergen Lugauer, Roland Zeisel, Matthias Sabathil, Anna Nirschl, Joachim Wagner
We report the direct observation of hot carriers generated by Auger recombination via photoluminescence spectroscopy on tailored (AlGaIn)N multiple quantum well (QW) structures containing alternating green and ultra-violet (UV) emitting (GaIn)N QWs.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2ef865c0dad339bd1afd04be340b86b9
https://publica.fraunhofer.de/handle/publica/233226
https://publica.fraunhofer.de/handle/publica/233226
Autor:
Ines Pietzonka, Christian Nenstiel, Thomas Kure, Martin Strassburg, Martin Albrecht, Tobias Schulz, Felix Nippert, Gordon Callsen, Anna Nirschl, Steffen Westerkamp, Axel Hoffmann
Publikováno v:
Journal of Applied Physics. 119:215707
We investigate industrial-grade InGaN/GaN quantum wells (QWs) emitting in the green spectral region under high, resonant pumping conditions. Consequently, an ubiquitous high energy luminescence is observed that we assign to a polarization field Confi
Autor:
Ines Pietzonka, Michael Binder, Bastian Galler, M. M. Karow, Roland Zeisel, Dominique Bougeard, Maximilian Schmid, Anna Nirschl, Matthias Sabathil, Hans-Juergen Lugauer
Publikováno v:
Journal of Applied Physics. 118:033103
Recent photoluminescence experiments presented by M. Binder et al. [Appl. Phys. Lett. 103, 071108 (2013)] demonstrated the visualization of high-energy carriers generated by Auger recombination in (AlInGa)N multi quantum wells. Two fundamental limita
Autor:
Felix Nippert, Martin Albrecht, Philipp Drechsel, Toni Markurt, Tobias Schulz, Anna Nirschl, Axel Hoffmann
Publikováno v:
Applied Physics Letters. 105:181109
The recombination dynamics of InxGa1−xN single quantum wells are investigated. By comparing the photoluminescence (PL) decay spectra with simulated emission spectra obtained by a Schrodinger-Poisson approach, we give evidence that recombination fro
Autor:
Matthias Sabathil, Michael Binder, Hans-Jürgen Lugauer, Berthold Hahn, Alvaro Gomez-Iglesias, Joachim Wagner, Bastian Galler, Richard Hollweck, Anna Nirschl, Yannick Folwill
Publikováno v:
Applied Physics Express. 6:112101
We investigate theoretically the influence of type and density of background carriers in the active region on the quantum efficiency of InGaN-based light emitters using an extension of the ABC rate model. A method to determine experimentally whether
Autor:
Nippert, Felix, Nirschl, Anna, Schulz, Tobias, Callsen, Gordon, Pietzonka, Ines, Westerkamp, Steffen, Kure, Thomas, Nenstiel, Christian, Strassburg, Martin, Albrecht, Martin, Hoffmann, Axel
Publikováno v:
Journal of Applied Physics; 2016, Vol. 119 Issue 21, p215707-1-215707-6, 6p, 3 Diagrams, 4 Graphs
Autor:
Nirschl, A., Binder, M., Schmid, M., Karow, M. M., Pietzonka, I., Lugauer, H.-J., Zeisel, R., Sabathil, M., Bougeard, D., Galler, B.
Publikováno v:
Journal of Applied Physics; 2015, Vol. 118 Issue 3, p033103-1-033103-6, 6p, 2 Diagrams, 3 Graphs
Autor:
Nirschl, Anna, Gomez‐Iglesias, Alvaro, Sabathil, Matthias, Hartung, Georg, Off, Jürgen, Bougeard, Dominique
Publikováno v:
Physica Status Solidi. A: Applications & Materials Science; Nov2014, Vol. 211 Issue 11, p2509-2513, 5p