Zobrazeno 1 - 1
of 1
pro vyhledávání: '"Anna N. Zazulina"'
Publikováno v:
Modern Electronic Materials, Vol 3, Iss 1, Pp 50-56 (2017)
We have analyzed the effect of volume and surface defects in SiC substrates on the structure and electrophysical parameters of AlGaN/GaN epitaxial heterostructures grown on them. Regions with internal stresses usually induced by carbon rich disk-shap
Externí odkaz:
https://doaj.org/article/dbe241af6b054403881eb0fed8888b3d
