Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Anna N, Hoffman"'
Publikováno v:
ACS Applied Materials & Interfaces. 12:7345-7350
Controlled O2/Ar plasma exposure and subsequent low temperature inert atmosphere annealing of chemical vapor deposition (CVD) grown PdSe2 flakes etch PdSe2 layer-by-layer in an atomic layer etching-like (ALE) process. X-ray photoelectron spectroscopy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02e2476bfb4a756ee0d3e4eabbc186e4
https://doi.org/10.1021/acsami.9b21287
https://doi.org/10.1021/acsami.9b21287
Publikováno v:
npj 2D Materials and Applications, Vol 3, Iss 1, Pp 1-7 (2019)
In this work we investigate the effects of ambient exposure on CVD grown PdSe2 and correlate density functional theory calculations of various physisorption and chemisorption binding energies and band structures to the observed changes in the electri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bdd20e2b8dc6962eb3ff28f485e1c54c
http://link.springer.com/article/10.1038/s41699-019-0132-4
http://link.springer.com/article/10.1038/s41699-019-0132-4
Autor:
Anna N. Hoffman, Christopher T. Nelson, Philip D. Rack, Kai Xiao, Maria Gabriela Sales, Stephen McDonnell, Michael G. Stanford, Yu-Chuan Lin
Publikováno v:
npj 2D Materials and Applications, Vol 3, Iss 1, Pp 1-7 (2019)
Tailoring the electrical transport properties of two-dimensional transition metal dichalcogenides can enable the formation of atomically thin circuits. In this work, cyclic hydrogen and oxygen plasma exposures are utilized to introduce defects and ox
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a8ac708a2d7a52449dd4c72f749ec7ca
http://link.springer.com/article/10.1038/s41699-019-0095-5
http://link.springer.com/article/10.1038/s41699-019-0095-5
Autor:
Anna N. Hoffman, James M. Tour, Ilia N. Ivanov, Jason D. Fowlkes, Michael G. Stanford, Cheng Zhang, Philip D. Rack
Publikováno v:
ACS applied materialsinterfaces. 12(9)
Laser-induced graphene (LIG) is a multifunctional graphene foam that is commonly direct-written with an infrared laser into a carbon-based precursor material. Here, a visible 405 nm laser is used to directly convert polyimide into LIG. This enabled t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6edeef8a6c1c639b05b3ca7f70c457f1
https://pubmed.ncbi.nlm.nih.gov/32039573
https://pubmed.ncbi.nlm.nih.gov/32039573
Publikováno v:
ACS applied materialsinterfaces. 12(6)
Controlled O
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::b3d1346cfe78590bdc5c29cf26977353
https://pubmed.ncbi.nlm.nih.gov/31951704
https://pubmed.ncbi.nlm.nih.gov/31951704
Autor:
Anna N. Hoffman, Philip D. Rack, Akinola D. Oyedele, Michael R. Koehler, Bobby G. Sumpter, Michael G. Stanford, Liangbo Liang, Ilia N. Ivanov, Cheng Zhang, Stephen McDonnell, David Mandrus, Kai Xiao, Maria Gabriela Sales
Publikováno v:
ACS Applied Materials & Interfaces. 10:36540-36548
Atmospheric and long-term aging effects on electrical properties of WSe2 transistors with various thicknesses are examined. Although countless published studies report electrical properties of transition-metal dichalcogenide materials, many are not a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e4ccfa2b5711518fce3f57a63d72b82
https://doi.org/10.1021/acsami.8b12545
https://doi.org/10.1021/acsami.8b12545
Autor:
Thomas Z. Ward, Pushpa Raj Pudasaini, Gerd Duscher, David Mandrus, Kai Xiao, Anna N. Hoffman, Philip D. Rack, Akinola D. Oyedele, Anthony T. Wong, Cheng Zhang, Nicholas Cross, Michael G. Stanford
Publikováno v:
Nano Research. 11:722-730
In this study, high-performance multilayer WSe2 field-effect transistor (FET) devices with carrier type control are demonstrated via thickness modulation and a remote oxygen plasma surface treatment. Carrier type control in multilayer WSe2 FET device
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6211379dc8eb347149748c929594ce36
https://doi.org/10.1007/s12274-017-1681-5
https://doi.org/10.1007/s12274-017-1681-5
Autor:
Yiyi Gu, Hui Cai, Jichen Dong, Yiling Yu, Anna N. Hoffman, Chenze Liu, Akinola D. Oyedele, Yu‐Chuan Lin, Zhuozhi Ge, Alexander A. Puretzky, Gerd Duscher, Matthew F. Chisholm, Philip D. Rack, Christopher M. Rouleau, Zheng Gai, Xiangmin Meng, Feng Ding, David B. Geohegan, Kai Xiao
Publikováno v:
Advanced Materials. 32:2003751
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fb940cffd03420bb34d6dc52eca6dba
https://doi.org/10.1002/adma.202003751
https://doi.org/10.1002/adma.202003751
Autor:
Kai Xiao, Feng Ding, Zheng Gai, Christopher M. Rouleau, Alexander A. Puretzky, Yiling Yu, David B. Geohegan, Chenze Liu, Anna N. Hoffman, Akinola D. Oyedele, Matthew F. Chisholm, Xiang-Min Meng, Philip D. Rack, Hui Cai, Yu-Chuan Lin, Jichen Dong, Gerd Duscher, Zhuozhi Ge, Yiyi Gu
Publikováno v:
Advanced Materials. 32:2070152
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1be0966b2e9c1d17198ff248b4f68703
https://doi.org/10.1002/adma.202070152
https://doi.org/10.1002/adma.202070152
Autor:
Pushpa Raj, Pudasaini, Michael G, Stanford, Akinola, Oyedele, Anthony T, Wong, Anna N, Hoffman, Dayrl P, Briggs, Kai, Xiao, David G, Mandrus, Thomas Z, Ward, Philip D, Rack
Publikováno v:
Nanotechnology. 28(47)
In this paper, high performance top-gated WSe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::861e77df169e4b2cb4bedb0531f61dfe
https://pubmed.ncbi.nlm.nih.gov/28718775
https://pubmed.ncbi.nlm.nih.gov/28718775