Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Anna Malmros"'
Autor:
Ding-Yuan Chen, Mattias Thorsell, Anna Malmros, Jr-Tai Chen, Niklas Rorsman, Hans Hjelmgren, Olof Kordina
Publikováno v:
IEEE Electron Device Letters. 41:828-831
High performance microwave GaN-on-SiC HEMTs are demonstrated on a heterostructure without a conventional thick doped buffer. The HEMT is fabricated on a high-quality $0.25~\boldsymbol {\mu }\text{m}$ unintentional doped GaN layer grown directly on a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fae75ac5985a3d18fc4edbb3bfaf9b2b
https://doi.org/10.1109/led.2020.2988074
https://doi.org/10.1109/led.2020.2988074
Autor:
Jr-Tai Chen, Herbert Zirath, Lars Hultman, Anna Malmros, Jun Lu, Einar Ö. Sveinbjörnsson, Hans Hjelmgren, Olof Kordina, Niklas Rorsman
Publikováno v:
IEEE Transactions on Electron Devices. 66:2910-2915
An enhancement of the electron mobility ( $\mu $ ) in InAlN/AlN/GaN heterostructures is demonstrated by the incorporation of a thin GaN interlayer (IL) between the InAlN and AlN. The introduction of a GaN IL increases $\mu $ at room temperature (RT)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71d61a7f1315093bcd60b5cfa43ad14c
https://doi.org/10.1109/ted.2019.2914674
https://doi.org/10.1109/ted.2019.2914674
Autor:
Mattias Thorsell, Herbert Zirath, Cedric Lacam, Anna Malmros, Hans Hjelmgren, Piero Gamarra, Niklas Rorsman, Sylvain Delage
Publikováno v:
IEEE Transactions on Electron Devices. 66:364-371
The impact of varying the GaN channel layer thickness ( ${t}_{\text {ch}}$ ) in InAlGaN/AlN/GaN HEMTs with C-doped AlGaN back barriers is investigated. ${t}_{\text {ch}}$ was 50, 100, and 150 nm, and the gate length of the fabricated HEMTs ranged fro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c2f879f5c65cae4664ba118c43a3aef
https://doi.org/10.1109/ted.2018.2881319
https://doi.org/10.1109/ted.2018.2881319
Autor:
Mattias Thorsell, Sebastian Gustafsson, Anna Malmros, Niklas Rorsman, Erik Janzén, Jr-Tai Chen, Johan Bergsten, Urban Forsberg
Publikováno v:
IEEE Transactions on Electron Devices. 63:333-338
The impact of the sharpness of the AlGaN/GaN interface in high-electron mobility transistors (HEMTs) is investigated. Two structures, one with an optimized AlGaN/GaN interface and another with an unoptimized, were grown using hot-wall metal-organic c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c70038efe1f56559aea75fe72d042d55
https://doi.org/10.1109/ted.2015.2501838
https://doi.org/10.1109/ted.2015.2501838
Autor:
Marie-Antoinette di Forte-Poisson, Cedric Lacam, Piero Gamarra, Mattias Thorsell, M. Tordjman, Anna Malmros, Herbert Zirath, Niklas Rorsman, Raphaël Aubry
Publikováno v:
physica status solidi c. 11:924-927
An InAlN/AlN/GaN HEMT with Au-free Ta-based ohmic contacts and a high-quality PECVD SiN passivation is reported. The ohmic contacts were annealed at 550 degrees C, resulting in a contact resistance of 0.64 Omm. The gate length was 50 nm. The device p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ef5a5b2e7d60267c50ae5a8deb2fd68
https://doi.org/10.1002/pssc.201300320
https://doi.org/10.1002/pssc.201300320
Autor:
Olle Axelsson, Anna Malmros, Niklas Rorsman, Johan Bergsten, Mattias Thorsell, Sebastian Gustafsson, Tongde Huang
Publikováno v:
IEEE Electron Device Letters. 36:537-539
A bilayer SiN x passivation scheme has been developed using low pressure chemical vapor deposition (LPCVD), which effectively suppresses the dispersive effects in AlGaN/GaN high-electron-mobility transistors (HEMTs) for microwave power operation. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8b13671f080340fb698b31a3e99a0f9
https://doi.org/10.1109/led.2015.2427294
https://doi.org/10.1109/led.2015.2427294
Autor:
Niklas Rorsman, Marie-Antoinette di Forte-Poisson, Raphaël Aubry, Cedric Lacam, M. Tordjman, Anna Malmros, Thanh Ngoc Thi Do, Piero Gamarra, Mikael Horberg, Dan Kuylenstierna
Publikováno v:
IEEE Electron Device Letters. 36:315-317
This letter reports on effects of Si3N4 and Al2O3 surface passivation as well as different deposition methods on the low-frequency noise (LFN) characteristics for AlInN/AlN/GaN high electron mobility transistors (HEMTs). Two samples are passivated wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58c02f73320d96f495c013511906b35b
https://doi.org/10.1109/led.2015.2400472
https://doi.org/10.1109/led.2015.2400472
Autor:
Hans Hjelmgren, Raphaël Aubry, Marie-Antoinette di Forte-Poisson, Anna Malmros, M. Tordjman, Piero Gamarra, Mattias Thorsell, Cedric Lacam, Niklas Rorsman
Publikováno v:
IEEE Electron Device Letters. 36:235-237
Al2O3 films deposited by thermal and plasma-assisted atomic layer deposition (ALD) were evaluated as passivation layers for InAlN/AlN/GaN HEMTs. As a reference, a comparison was made with the more conventional plasma enhanced chemical vapor depositio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c68cbc83960e640256150ef64f7a0f1
https://doi.org/10.1109/led.2015.2394455
https://doi.org/10.1109/led.2015.2394455
Publikováno v:
Thin Solid Films. 520:2162-2165
The opposite signs of the temperature coefficient of resistance (TCR) of two thin film materials, titanium nitride (TiN) and tantalum nitride (TaN), were used to form temperature compensated thin film resistors (TFRs). The principle of designing temp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::987f7f72ade78a812181dc43603a41ff
https://doi.org/10.1016/j.tsf.2011.09.050
https://doi.org/10.1016/j.tsf.2011.09.050
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28:912-915
Titanium nitride (TiN) thin film resistors (TFRs) have been fabricated by reactive sputter deposition. The TFRs were characterized in terms of composition, thickness, and resistance. Furthermore, a first assessment of the resistor reliability was mad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16d95fe9aa3efe8a0f0487044511a990
https://doi.org/10.1116/1.3475532
https://doi.org/10.1116/1.3475532