Innovative Low-Power Self-Nanoconfined Phase-Change Memory

Autor: Gauthier Lefevre, C. Sabbione, Sylvain David, Etienne Nowak, J. Garrione, N. Castellani, Marie-Claire Cyrille, Anna Lisa Serra, Nicolas Bernier, Christophe Vallée, Guillaume Bourgeois, Gabriele Navarro, Mathieu Bernard, O. Cueto, Christelle Charpin-Nicolle

Publikováno v: IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2021, 68 (2), pp.535-540. ⟨10.1109/TED.2020.3044267⟩
IEEE Transactions on Electron Devices, 2021, 68 (2), pp.535-540. ⟨10.1109/TED.2020.3044267⟩

International audience; In this paper, we demonstrate at array level and in industrial like devices, the extreme scaling down to nanometric dimensions of the Phase-Change Memory technology thanks to an innovative Self-Nano-Confined PCM device (SNC PC

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a85ded2bac29098bfe311f43f120a78b
https://hal-cea.archives-ouvertes.fr/cea-03119677/document

Optimization of 3ω Method for Phase-Change Materials Thermal Conductivity Measurement at High Temperature

Autor: Gabrie Navarro, J. Garrione, Anna Lisa Serra, Marie Claire Cyrille, Etienne Nowak, Guillaume Bourgeois, J. Cluzel

Publikováno v: 2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS).

Thermal conductivity (kth) of Ge-rich Ge-Sb-Te phase-change material (GGST) is here investigated at temperatures up to $400\ ^{\circ}\mathrm{C}$ through “3ω method”. We present the engineering of the test vehicle, with the optimization of the me

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::51e140d9aedd75f9f2c410591f26fb3b
https://doi.org/10.1109/icmts.2019.8730993

Structural and Electrical Response of Emerging Memories Exposed to Heavy Ion Radiation

Autor: Tobias Vogel, Alexander Zintler, Nico Kaiser, Nicolas Guillaume, Gauthier Lefèvre, Maximilian Lederer, Anna Lisa Serra, Eszter Piros, Taewook Kim, Philipp Schreyer, Robert Winkler, Déspina Nasiou, Ricardo Revello Olivo, Tarek Ali, David Lehninger, Alexey Arzumanov, Christelle Charpin-Nicolle, Guillaume Bourgeois, Laurent Grenouillet, Marie-Claire Cyrille, Gabriele Navarro, Konrad Seidel, Thomas Kämpfe, Stefan Petzold, Christina Trautmann, Leopoldo Molina-Luna, Lambert Alff

Publikováno v: ACS Nano 2022, 16, 9, 14463–14478

Hafnium oxide- and GeSbTe-based functional layers are promising candidates in material systems for emerging memory technologies. They are also discussed as contenders for radiation-harsh environment applications. Testing the resilience against ion ra

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::565cf02d063406cb245426e01ee55abe

Phase-change memory electro-thermal analysis and engineering thanks to enhanced thermal confinement

Autor: Anna Lisa Serra, Gabriele Navarro, Gauthier Lefevre, Etienne Nowak, Guillaume Bourgeois, Marie Claire Cyrille, O. Cueto

Publikováno v: Solid-State Electronics
Solid-State Electronics, 2021, 186, pp.108111. ⟨10.1016/j.sse.2021.108111⟩
Solid-State Electronics, Elsevier, 2021, 186, pp.108111. ⟨10.1016/j.sse.2021.108111⟩

International audience; In this paper we compare the performances of SiN with respect to an optimized SiC encapsulation in Wall based Phase-Change Memory (PCM) integrating a Ge-rich Ge-Sb-Te alloy (GGST) suitable for high temperature stability in aut

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::67e2219329282ff025bd8c71af622799