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pro vyhledávání: '"Anna Isabel Ramones"'
Autor:
Bufan Shi, Anna Isabel Ramones, Yingxu Liu, Haoran Wang, Yu Li, Stefan Pischinger, Jakob Andert
Publikováno v:
IET Power Electronics, Vol 16, Iss 12, Pp 2103-2120 (2023)
Abstract Compared with silicon‐based Insulated Gate Bipolar Transistors (IGBTs), silicon carbide (SiC) Metal‐Oxide‐Semiconductor Field‐Effect Transistors (MOSFETs) are characterized by higher operating temperatures, switching speeds and switc
Externí odkaz:
https://doaj.org/article/871166b1382144328556da1af2cc6b51
Autor:
Bufan Shi, Anna Isabel Ramones, Yingxu Liu, Haoran Wang, Yu Li, Stefan Pischinger, Jakob Andert
Publikováno v:
IET Power electronics (2023). doi:10.1049/pel2.12524
IET Power electronics (2023). doi:10.1049/pel2.12524
Published by Wiley, Hoboken, NJ
Published by Wiley, Hoboken, NJ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1bb660440f1c8076ff162b00f9345805
