Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Anna Golotsvan"'
Autor:
Boaz Ophir, Manabu Miyake, Cindy Kato, Masanobu Hayashi, Taketo Kuriyama, Hiroyuki Mizuochi, Richika Kato, Udi Shusterman, Tomohiro Goto, Anna Golotsvan, Yasuki Takeuchi
Publikováno v:
Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV.
Tool Induced Shift (TIS) is a measurement error commonly used to measure the accuracy of metrology tools. TIS manifests in the difference in overlay (OVL) misregistration between measurements of the same target at 0ᴼ and 180ᴼ rotations. This inac
Publikováno v:
Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV.
On product overlay (OPO) challenges continue to be yield limiters for most advanced technology nodes, requiring new and innovative metrology solutions. In this paper we will cover an approach to boost accuracy and robustness to process variation in i
Autor:
Shlomit Katz, Wayne (Wei) Zhou, Jeremy Wei, Shi Lei, Linfei Gao, Pek Beng Ong, Fiona Leung, Efi Megged, Greg Gray, Anna Golotsvan, Yoav Grauer
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXIV.
In the latest 3D NAND devices there is a larger focus on measurement accuracy control, coupled with more traditional minimization of Total Measurement Uncertainty (TMU). Measurement inaccuracy consumes an increasingly significant part of the overlay
Autor:
Anna Golotsvan, Efi Megged, Roie Volkivich, Dohwa Lee, Dongsub Choi, Jaesun Woo, Sanghuck Jeon, Jin-Soo Kim, Seongjae Lee, Dongyoung Lee, Honggoo Lee, Chunsoo Kang, Chanha Park, Shlomit Katz
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXIV.
As the semiconductor industry rapidly approaches the 3nm lithography node, on product overlay (OPO) requirements have become tighter and as a result, residuals magnitude requirements have become even more challenging. Metrology performance enhancemen
Autor:
Shi-Ming Wei, Pek Beng Ong, Shlomit Katz, Anna Golotsvan, Liran Yerushalmi, Efi Megged, Fiona Leung, Judith Yep, Yoav Grauer, Jian Zhang, Boaz Ophir, Udi Shusterman, Alimei Shih
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXIV.
Tool induced shift (TIS) is a measurement error attributed to tool asymmetry issues and is commonly used to measure the accuracy of metrology tools. Overlay (OVL) measurement inaccuracy is commonly caused by lens aberration, lens alignment, illuminat
Autor:
Chanha Park, Minhyung Hong, Sangjun Han, John C. Robinson, Jieun Lee, Tal Marciano, Zephyr Liu, Dana Klein, Dongsub Choi, Roie Volkovich, Ahlin Choi, Hao Mei, Eitan Hajaj, Dohwa Lee, Lilach Saltoun, Jung-Tae Lee, Eitan Herzel, Wayne (Wei) Zhou, Dongyoung Lee, Anna Golotsvan, Jeongpyo Lee, Honggoo Lee, Eran Amit, Sanghuck Jeon, Seongjae Lee
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXIII.
Overlay process control is a critical aspect of integrated circuit manufacturing. Advanced DRAM manufacturing overlay error budget approaches the sub-2nm threshold, including all sources of overlay error: litho processing, non-litho processing, metro
Autor:
Dhara Dave, Guido Rademaker, Anna Golotsvan, Erwin Slot, Ronny Haupt, T. Shapoval, Stefan Landis, Anat Marchelli, Stephane Rey, Tal Itzkovich, Laurent Pain, Guido De Boer, Jonathan Pradelles, Marco Jan-Jaco Wieland
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXII.
One of the metrology challenges for massively parallel electron beams is to verify that all the beams that are used perform within specification. The Mapper FLX-1200 platform exposes fields horizontally segmented in 2.2 μm-wide stripes. This yields
Autor:
Minhyung Hong, Jieun Lee, Guy Ben-Dov, Young-Sik Kim, Eitan Hajaj, Seungyoung Kim, Yoonshik Kang, Dana Klein, Anna Golotsvan, Dongyoung Lee, Ahlin Choi, Saltoun Lilach, Eungryong Oh, Tal Marciano, Dan Serero, Kyuchan Shim, Sangjoon Han, Aharon Sharon, Honggoo Lee
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXII.
As semiconductor manufacturing technology progresses and the dimensions of integrated circuit elements shrink, overlay budget is accordingly being reduced. Overlay budget closely approaches the scale of measurement inaccuracies due to both optical im
Autor:
Michael E. Adel, Mark D. Smith, Sangjun Han, Dongsub Choi, Myungjun Lee, Efi Megged, Anna Golotsvan, Joonseuk Lee, Tal Itzkovich, Amnon Manassen, Yuri Paskover, Victoria Naipak, Dohwa Lee, Tom Leviant, Honggoo Lee, Zephyr Liu, Vladimir Levinski, Mi-Rim Jung, Young-Sik Kim
Publikováno v:
SPIE Proceedings.
In recent years, lithographic printability of overlay metrology targets for memory applications has emerged as a significant issue. Lithographic illumination conditions such as extreme dipole, required to achieve the tightest possible pitches in DRAM
Autor:
Lipkong Yap, Young Ki Kim, Lokesh Subramany, Hong Wei, Karsten Gutjahr, Jie Gao, Ram Karur-Shanmugam, Pedro Herrera, Woong Jae Chung, Joungchel Lee, Chen Li, Anna Golotsvan, Vidya Ramanathan, Mark Yelverton, Kevin Huang, Lester Wang, Jeong Soo Kim, John Tristan, Bill Pierson, Ching-Hsiang Hsu
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXVIII.
As leading edge lithography moves to advanced nodes in high-mix, high-volume manufacturing environment, automated control of critical dimension (CD) within wafer has become a requirement. Current control methods to improve CD uniformity (CDU) general