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Autor:
Artem A. Osipov, Sergey V. Karakchiev, Gleb A. Iankevich, Armenak A. Osipov, Svetlana N. Levina, E.V. Endiiarova, Anna A. Karakchieva, Anastasiya B. Speshilova, Sergey E. Alexandrov
Publikováno v:
Journal of Manufacturing Processes. 73:316-325
This paper presents the results of an in-depth study of the plasma-chemical etching (PCE) process of single-crystal silicon carbide (SiC) in SF6/O2 inductively coupled plasma (ICP). Using the method of optical emission spectroscopy (OES) we have exam