Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Ann-Kathrin Kleinschmidt"'
Autor:
Ann-Kathrin Kleinschmidt, Lars Barzen, Johannes Strassner, Christoph Doering, Henning Fouckhardt, Wolfgang Bock, Michael Wahl, Michael Kopnarski
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 7, Iss 1, Pp 1783-1793 (2016)
Reflectance anisotropy spectroscopy (RAS) equipment is applied to monitor dry-etch processes (here specifically reactive ion etching (RIE)) of monocrystalline multilayered III–V semiconductors in situ. The related accuracy of etch depth control is
Externí odkaz:
https://doaj.org/article/08c4ab3abe1f4c8092f9d3d388b5ce0c
Publikováno v:
Advances in OptoElectronics, Vol 2019 (2019)
Previously in this journal we have reported on fundamental transversemode selection (TMS#0) of broad area semiconductor lasers (BALs) with integrated twice-retracted 4f set-up and film-waveguide lens as the Fourier-transform element. Now we choose an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a1abf628f97ec712a4058691d350da9f
https://doaj.org/article/d6bee0873f444ce8a59745fd68ac67a5
https://doaj.org/article/d6bee0873f444ce8a59745fd68ac67a5
Autor:
Ann-Kathrin Kleinschmidt, Lars Barzen, Wolfgang Bock, Michael Wahl, Henning Fouckhardt, Johannes Strassner, Michael Kopnarski, Christoph Doering
Publikováno v:
Applied Surface Science. 357:530-538
Reflectance anisotropy spectroscopy (RAS) can be used to monitor (reactive) ion etching (RIE) of semiconductor samples. We present results on the influence of the Cl2 content of the plasma gas on the RAS spectra during reactive ion etching. In a firs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba564616c3a05b72b4bee817c41338a9
https://doi.org/10.1016/j.apsusc.2015.09.040
https://doi.org/10.1016/j.apsusc.2015.09.040
Autor:
Lars Barzen, Johannes Strassner, Ann-Kathrin Kleinschmidt, Henning Fouckhardt, Christoph Doering
Publikováno v:
Optical Measurement Systems for Industrial Inspection X.
Reflectance anisotropy spectroscopy (RAS) allows for in-situ monitoring of reactive ion etching (RIE) of monocrystalline III-V semiconductor surfaces. Upon use of RAS the sample to be etched is illuminated with broad-band linearly polarized light und
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::350abe265c05fe3e9f4a6891b922b76a
https://doi.org/10.1117/12.2269708
https://doi.org/10.1117/12.2269708
Publikováno v:
Advances in OptoElectronics, Vol 2017 (2017)
Previously we focused on fundamental transverse mode selection (TMS#0) of broad area semiconductor lasers (BALs) with two-arm folded integrated resonators for Fourier-optical spatial frequency filtering. The resonator had a round-trip length of 4f, w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2b3f65116ae7c738bc826dc1e909df2f