Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Ankita Sengupta"'
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-19 (2024)
Abstract Attention facilitates behavior by enhancing perceptual sensitivity (sensory processing) and choice bias (decisional weighting) for attended information. Whether distinct neural substrates mediate these distinct components of attention remain
Externí odkaz:
https://doaj.org/article/281cd93745074e2ea6c906e1212d2121
Autor:
Ankita Sengupta, Basudev Nag Chowdhury, Bodhishatwa Roy, Subhrajit Sikdar, Sanatan Chattopadhyay
Publikováno v:
Lecture Notes in Electrical Engineering ISBN: 9789819900541
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92b8ad1fdbe96f21e14e1bbb0548646d
https://doi.org/10.1007/978-981-99-0055-8_24
https://doi.org/10.1007/978-981-99-0055-8_24
Autor:
Rajib Saha, Sangita Bhowmick, Madhuri Mishra, Ankita Sengupta, Sanatan Chattopadhyay, Subhananda Chakrabarti
Publikováno v:
UV and Higher Energy Photonics: From Materials to Applications 2022.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0917ed7dee49376d53b3c5445ec0bd29
https://doi.org/10.1117/12.2633319
https://doi.org/10.1117/12.2633319
Autor:
Sangita Bhowmick, Rajib Saha, Madhuri Mishra, Arnab Mandal, Ankita Sengupta, Ankush Bag, Sanatan Chattopadhyay, Subhananda Chakrabarti
Publikováno v:
Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XIX.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41f560cd3ce155bf20d919757b600986
https://doi.org/10.1117/12.2633278
https://doi.org/10.1117/12.2633278
Autor:
Sangita Bhowmick, Rajib Saha, Madhuri Mishra, Ankita Sengupta, Sanatan Chattopadhyay, Subhananda Chakrabarti
Publikováno v:
Materials Today Communications. 33:104766
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::695f9ce2867a26e62cd3631403c5427e
https://doi.org/10.1016/j.mtcomm.2022.104766
https://doi.org/10.1016/j.mtcomm.2022.104766
Autor:
Rajib Saha, Sangita Bhowmick, Madhuri Mishra, Ankita Sengupta, Sanatan Chattopadhyay, Subhananda Chakrabarti
Publikováno v:
Journal of Physics D: Applied Physics. 55:505101
In the current work, thin film (∼55 nm) of n-type Ga2O3 (n-Ga2O3) is deposited on silicon (p-Si) substrate by using radio-frequency (RF) sputtering technique with systematic substrate temperature variations (room temperature to 700 °C). The struct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3c46c203599ac92d453e81b37f49a74
https://doi.org/10.1088/1361-6463/ac9b69
https://doi.org/10.1088/1361-6463/ac9b69