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Reduced Auger Coefficient through Efficient Carrier Capture and Improved Radiative Efficiency from the Broadband Optical Cavity: A Mechanism for Potential Droop Mitigation in InGaN/GaN LEDs

Autor: Tarni Aggarwal, Ankit Udai, Pratim K. Saha, Swaroop Ganguly, Pallab Bhattacharya, Dipankar Saha

Publikováno v: ACS Applied Materials & Interfaces. 14:13812-13819

Efficiency droop at high carrier-injection regimes is a matter of concern in InGaN/GaN quantum-confined heterostructure-based light-emitting diodes (LEDs). Processes such as Shockley-Reed-Hall and Auger recombinations, electron-hole wavefunction sepa

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8b27ff3bc470b59df64f728ffbe94c2b
https://doi.org/10.1021/acsami.1c20003

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Real-time observation of delayed excited-state dynamics in InGaN/GaN quantum-wells by femtosecond transient absorption spectroscopy

Autor: Ankit Udai, Swaroop Ganguly, Pallab Bhattacharya, Dipankar Saha

Publikováno v: Nanotechnology. 33(47)

This work employs femtosecond transient absorption spectroscopy to investigate the ultrafast carrier dynamics of bound states in In0.14Ga0.86N/GaN quantum wells. The ground state (GS) dynamics usually dominate these characteristics, appearing as a pr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::14a0d4312e4efdc15f1745b35d14e52b
https://pubmed.ncbi.nlm.nih.gov/35977452

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Femto-Second Carrier and Photon Dynamics in Site Controlled Hexagonal InGaN/GaN Isolated Quantum Dots: Natural Radial Potential Well and Its Dynamic Modulation

Autor: Ankit Udai, Vikas Pendem, Pratim Kumar Saha, Swaroop Ganguly, Dipankar Saha, Tarni Aggarwal

Publikováno v: ACS Photonics. 7:2555-2561

Quantum dot (QD) is slated to play a significant role in quantum technologies through its usage as a single-photon source. It also has promising applications as efficient light emitters through str...

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::50391fca78f65cca6d1224182defe4fb
https://doi.org/10.1021/acsphotonics.0c00905

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Gradual Carrier Filling Effect in 'Green' InGaN/GaN Quantum Dots: Femtosecond Carrier Kinetics with Sequential Two-Photon Absorption

Autor: Tarni Aggarwal, Ankit Udai, Anthony Aiello, Pallab Bhattacharya, Dipankar Saha

Publikováno v: ACS applied materialsinterfaces. 13(37)

Quantum dots (QDs) allow for a significant amount of strain relaxation, which is helpful in GaN systems where a large lattice mismatch needs to be accommodated. InGaN QDs with a large indium composition are intensively investigated for light emitters

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ce2ea709b6ef0c2c2aa5bcd82315712d
https://pubmed.ncbi.nlm.nih.gov/34495630

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Determining the carrier decay kinetics in QCSE-exhibiting materials: An accurate interpretation of transient absorption spectroscopy data

Autor: Vikas Pendem, Ankit Udai, Swaroop Ganguly, Tarni Aggarwal, Dipankar Saha

Publikováno v: 2021 Photonics North (PN).

Carrier dynamics is fundamental in the optimal performance of optoelectronic devices. TAS experiments can be used to study carrier dynamics at a particular wavelength. However, the $\Delta \alpha$ kinetics in QCSE-exhibiting materials turns out to be

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8f8401befed76349ea0e02c4033caec9
https://doi.org/10.1109/pn52152.2021.9597914

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Determination of strain relaxation in InGaN/GaN nanowalls from quantum confinement and exciton binding energy dependent photoluminescence peak

Autor: Shonal Chouksey, Pratim Kumar Saha, Dipankar Saha, Vikas Pendem, Sandeep Sankaranarayanan, Swaroop Ganguly, Tarni Aggarwal, Ankit Udai

Publikováno v: Scientific Reports, Vol 8, Iss 1, Pp 1-8 (2018)
Scientific Reports

GaN based nanostructures are being increasingly used to improve the performance of various devices including light emitting diodes and lasers. It is important to determine the strain relaxation in these structures for device design and better predict

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9992dcff2e27e41ebd4ce1516258d6bb
http://link.springer.com/article/10.1038/s41598-018-26725-6

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Angle-Dependent Pump-Probe Differential Transient Absorption Spectroscopy as a Novel Technique to Examine Surface Properties of Semiconductor Nanostructures

Autor: Shonal Chouksey, Vikas Pendem, Pratim Kumar Saha, Ankit Udai, Dipankar Saha, Tarni Aggarwal, Swaroop Ganguly

Publikováno v: OSA Advanced Photonics Congress (AP) 2019 (IPR, Networks, NOMA, SPPCom, PVLED).

We describe a non-destructive optical technique to probe semiconductor surfaces, using ultrafast pump-probe transient absorption spectroscopy (TAS). Angle-dependent TAS decouples surface and bulk differential absorptions to measure surface dynamics.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a2aa623e747e00605aea7b3a7efbc047
https://doi.org/10.1364/pvled.2019.pw3c.4

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Femto-second transient absorption spectroscopy for probing near-surface carrier-photon dynamics in gallium nitride

Autor: Swaroop Ganguly, Vikas Pendem, Dipankar Saha, Pratim Kumar Saha, Tarni Aggarwal, Shonal Chouksey, Ankit Udai

Publikováno v: Applied Surface Science. 518:146225

Periodicity of a crystal breaks at the surface leading to a large number of surface dangling bonds. These bonds create additional states in the bandgap of a semiconductor, which induces a static built-in electric field near the surface. This field mo

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5d3bc7a1441d0dc98c63d8bfc7d1b98d
https://doi.org/10.1016/j.apsusc.2020.146225

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