Zobrazeno 1 - 10
of 36
pro vyhledávání: '"Ankit Nalin Mehta"'
Autor:
Daniil Marinov, Jean-François de Marneffe, Quentin Smets, Goutham Arutchelvan, Kristof M. Bal, Ekaterina Voronina, Tatyana Rakhimova, Yuri Mankelevich, Salim El Kazzi, Ankit Nalin Mehta, Pieter-Jan Wyndaele, Markus Hartmut Heyne, Jianran Zhang, Patrick C. With, Sreetama Banerjee, Erik C. Neyts, Inge Asselberghs, Dennis Lin, Stefan De Gendt
Publikováno v:
npj 2D Materials and Applications, Vol 5, Iss 1, Pp 1-10 (2021)
Abstract The cleaning of two-dimensional (2D) materials is an essential step in the fabrication of future devices, leveraging their unique physical, optical, and chemical properties. Part of these emerging 2D materials are transition metal dichalcoge
Externí odkaz:
https://doaj.org/article/f7264bb1bbb04927a645eab375c746fc
Autor:
Shreya Kundu, Stefan Decoster, Philippe Bezard, Ankit Nalin Mehta, Harold Dekkers, Frederic Lazzarino
Publikováno v:
ACS Applied Materials & Interfaces. 14:34029-34039
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d4faadbb8ecd777088a6f45f8f4e132
https://doi.org/10.1021/acsami.2c07514
https://doi.org/10.1021/acsami.2c07514
Autor:
Geoffrey Pourtois, Benjamin Groven, Ankit Nalin Mehta, Hugo Bender, Paola Favia, Matty Caymax, Wilfried Vandervorst, A. Dabral, Jiongjiong Mo
Publikováno v:
The Journal of Physical Chemistry C. 124:6472-6478
Grain boundaries between 60° rotated and twinned crystals constitute the dominant type of extended line defects in two-dimensional transition metal dichalcogenides (2D MX2) when grown on a single c...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fe3bce3ae5b380dbd80068aa39d127cc
https://doi.org/10.1021/acs.jpcc.0c01468
https://doi.org/10.1021/acs.jpcc.0c01468
Autor:
Roger Loo, Nicolas Gosset, Megumi Isaji, Yumi Kawamura, Andriy Yakovitch Hikavyy, Erik Rosseel, Clement Porret, Ankit Nalin Mehta, Jean-Marc Girard
Publikováno v:
ECS Meeting Abstracts. :1194-1194
Forksheet transistors are lateral nanosheet devices with a forked gate structure [1,2]. The physical separation of N- and PFETs by a dielectric wall enables N-P space scaling and consequently sheet width maximization within the limited footprint of l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dfcff9069cd0d5f9c38bed5eb52419f4
https://doi.org/10.1149/ma2022-02321194mtgabs
https://doi.org/10.1149/ma2022-02321194mtgabs
Autor:
Jean-Francois de Marneffe, Ankit Nalin Mehta, Quentin Smets, J.F Zhang, Sreetama Banerjee, Stefan De Gendt, Ekaterina N. Voronina, Tatyana Rakhimova, Pieter-Jan Wyndaele, Markus Heyne, Kristof M. Bal, Daniil Marinov, Dennis Lin, Inge Asselberghs, Goutham Arutchelvan, Yuri A. Mankelevich, Salim El Kazzi, Erik C. Neyts
Publikováno v:
npj 2D Materials and Applications
npj 2D Materials and Applications, Vol 5, Iss 1, Pp 1-10 (2021)
npj 2D Materials and Applications, Vol 5, Iss 1, Pp 1-10 (2021)
The cleaning of two-dimensional (2D) materials is an essential step in the fabrication of future devices, leveraging their unique physical, optical, and chemical properties. Part of these emerging 2D materials are transition metal dichalcogenides (TM
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1cad96acd69b3082ae224262b7495320
https://hdl.handle.net/10067/1758710151162165141
https://hdl.handle.net/10067/1758710151162165141
Autor:
Ankit Nalin Mehta, Quentin Smets, Yuanyuan Shi, Surajit Sutar, Dennis Lin, Inge Asselberghs, Iuliana Radu, Devin Verreck, Goutham Arutchelvan, Benjamin Groven, Sreetama Banerjee, Xiangyu Wu
Publikováno v:
IEEE International Electron Devices Meeting (IEDM)
2020 IEEE International Electron Devices Meeting (IEDM)
2020 IEEE International Electron Devices Meeting (IEDM)
Through advances in growth, cleaning, and device fabrication, our scaled MoS 2 FET flow has reached sufficient maturity to study variability. We show devices with median SS min 80mV/dec and I max >100µA/µm and find that thinning down the MoS 2 chan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9ebef4f9b659c87198e444b4df6712db
https://doi.org/10.1109/iedm13553.2020.9371890
https://doi.org/10.1109/iedm13553.2020.9371890
Autor:
Ankit, Nalin Mehta, Nicolas, Gauquelin, Magnus, Nord, Andrey, Orekhov, Hugo, Bender, Dorin, Cerbu, Johan, Verbeeck, Wilfried, Vandervorst
Publikováno v:
Nanotechnology. 31(44)
Following an extensive investigation of various monolayer transition metal dichalcogenides (MX
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::d91561b81bca303380c584581a4fbf02
https://pubmed.ncbi.nlm.nih.gov/32663810
https://pubmed.ncbi.nlm.nih.gov/32663810
Autor:
Ankit Nalin Mehta, Yashwanth Balaji, Marc Heyns, Clement Merckling, Wouter Mortelmans, Stefan De Gendt, Ruishen Meng, Michel Houssa, Stefanie Sergeant
Layered materials held together by weak van der Waals (vdW) interactions are a promising class of materials in the field of nanotechnology. Besides the potential for single layers, stacking of various vdW layers becomes even more promising since uniq
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::015ec7ac23cab89a57e3c2fcd1a608e5
https://lirias.kuleuven.be/handle/123456789/658228
https://lirias.kuleuven.be/handle/123456789/658228
Autor:
Abhinav Gaur, Inge Asselberghs, Benjamin Groven, Iuliana Radu, Devin Verreck, Goutham Arutchelvan, Salim El Kazzi, Matty Caymax, Dennis Lin, J. Jussot, Ankit Nalin Mehta, Quentin Smets
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
We show that downscaling the top-contact length to 13nm induces no penalty on the electrical characteristics for CVD MoS 2 FETs. We demonstrate this for devices with different gate-oxides and operating in both channel and contact-limited regimes, thu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::718f68fac0d2f494880582768debd06c
https://doi.org/10.1109/iedm19573.2019.8993650
https://doi.org/10.1109/iedm19573.2019.8993650
Publikováno v:
Journal of Materials Science: Materials in Electronics. 29:5239-5252
In this work, we systematically investigate and compare noninvasive doping of chemical vapor deposition graphene with three molecule dopants through spectroscopy and electrical conductivity techniques. Thionyl chloride shows the smallest improvement
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::276458676b2e21b01d3ab317d647348a
https://doi.org/10.1007/s10854-017-8443-8
https://doi.org/10.1007/s10854-017-8443-8