Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Anke Hanisch"'
Autor:
Iuliana Panchenko, Laura Wenzel, Maik Mueller, Catharina Rudolph, Anke Hanisch, Juergen M. Wolf
Publikováno v:
IEEE Transactions on Components, Packaging and Manufacturing Technology. 12:410-421
The focus of this study is a detailed characterization of hybrid Cu/SiO 2 wafer-to-wafer bonding interconnects after reliability testing. Hybrid bonding (or direct bond interconnect) is a technology of choice for fine pitch bonding without microbumps
Autor:
H. Wachsmuth, Olaf Wittler, Anke Hanisch, M. J. Wolf, Iuliana Panchenko, M. Voigtlander, P. Gansauer, Thomas Werner, S. Kuttler, Catharina Rudolph
Publikováno v:
2021 IEEE 71st Electronic Components and Technology Conference (ECTC).
The hybrid bonding is well established at wafer level and a very promising technology for fine pitch stacking with through-silicon-via interconnect without solder capped micro bumps. The elimination of solder enables smaller bonding pitches and small
Autor:
Jörg Meyer, Anke Hanisch, Iuliana Panchenko, Marcel Wieland, Gaurav Khurana, Catharina Rudolph
Publikováno v:
2021 44th International Spring Seminar on Electronics Technology (ISSE).
A feasibility study of die-to-die (D2D) direct bonding with oxide surface is conducted using regular industrial cleanroom tools for wafer processing. The study highlights the influence of different wafer dicing, die handling and cleaning methods on t
Autor:
M. J. Wolf, Iuliana Panchenko, Maik Mueller, Anke Hanisch, Laura Wambera, Irene Bartusseck, Catharina Rudolph
Publikováno v:
2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC).
The focus of this study is a grain structure analysis of hybrid Cu/SiO 2 wafer-to-wafer bonding interconnects after reliability testing. Hybrid bonding also known as direct bond interconnect is a very promising technology for fine pitch bonding witho
Autor:
Ping Liu, Gabe Guevara, Anke Hanisch, Catharina Rudolph, Guilian Gao, Laura Wills Mirkarimi, Jeremy Theil, Pawel Mrozek, Michael Huynh, Gill Fountain, Bongsub Lee, Thomas Workman, Thomas Werner
Publikováno v:
2019 IEEE 69th Electronic Components and Technology Conference (ECTC).
Current DRAM advanced chip stack packages such as the high bandwidth memory (HBM) use throughsilicon-via (TSV) and thermal compression bonding (TCB) of solder capped micro bumps for the inter-layer connection. The bonding process has low throughput a