Zobrazeno 1 - 10
of 40
pro vyhledávání: '"Ankang Li"'
Publikováno v:
American Journal of Orthodontics and Dentofacial Orthopedics. 163:553-560.e3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b335c51924445e6f3815e015852f34e
https://doi.org/10.1016/j.ajodo.2022.11.011
https://doi.org/10.1016/j.ajodo.2022.11.011
Publikováno v:
Frontiers in Cardiovascular Medicine, Vol 11 (2024)
BackgroundDiastolic dysfunction emerges early in patients with cardiac insufficiency and is prevalent, underscoring the importance of its early identification and intervention in the prevention of heart failure. The study leverages the convenience an
Externí odkaz:
https://doaj.org/article/7a815407c7854fa581b29846d4f07e0b
Publikováno v:
Frontiers in Psychology, Vol 15 (2024)
IntroductionLong-term care assistants are taking on more important roles in the healthcare system. The purpose of this study was to investigate what demographic factors influence the core competencies of nursing assistants, as well as to investigate
Externí odkaz:
https://doaj.org/article/e418b3fb987a48e9adddae84d1850005
Publikováno v:
Applied Thermal Engineering. 221:119707
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::166250787cd89b33b6239651a0b8bee3
https://doi.org/10.1016/j.applthermaleng.2022.119707
https://doi.org/10.1016/j.applthermaleng.2022.119707
Autor:
Gang Lyu, Weifeng Sun, Shaohong Li, Ankang Li, Kevin J. Chen, Wangran Wu, Jie Ma, Jiaxing Wei, Long Zhang, Shilin Cao, Jing Zhu, Sheng Li, Jin Wei
Publikováno v:
IEEE Electron Device Letters. 40:1658-1661
A planar gate U-shaped (PGU) channel silicon-on-insulator (SOI) lateral insulated gate bipolar transistor (LIGBT) featuring divided gates (G1 and G2) is proposed, which aims to suppress the gate voltage (VG) overshoot and improve the di/dt controllab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e572343a9b89eee4f971df2529d1b337
https://doi.org/10.1109/led.2019.2937399
https://doi.org/10.1109/led.2019.2937399
Autor:
Jie Ma, Shaohong Li, Long Zhang, Ran Ye, Longxing Shi, Jing Zhu, Jianfeng Zhao, Weifeng Sun, Shilin Cao, Ankang Li
Publikováno v:
IEEE Transactions on Electron Devices. 66:1409-1415
In this paper, five types of superjunction (SJ) configurations are investigated in the silicon-on-insulator lateral insulated-gate bipolar transistor (SOI-LIGBT). technology computer aided design simulations are carried out to give insight into the m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a574187571e1ba6e5892a807fea488a
https://doi.org/10.1109/ted.2019.2894813
https://doi.org/10.1109/ted.2019.2894813
Autor:
Jing Zhu, Shaohong Li, Shilin Cao, Yanqin Zou, Yan Gu, Longxing Shi, Weifeng Sun, Jie Ma, Ankang Li, Sen Zhang, Jianfeng Zhao, Long Zhang
Publikováno v:
IEEE Transactions on Electron Devices. 66:1430-1434
A novel 500-V rated silicon-on-insulator lateral insulated-gate bipolar transistor (SOI-LIGBT), featuring a W-shaped n-typed buffer and p-typed composite collectors, is proposed for the first time in this paper. The composite collectors which consist
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1267bf18f9863169b4ccd356aa30693e
https://doi.org/10.1109/ted.2018.2890545
https://doi.org/10.1109/ted.2018.2890545
Publikováno v:
Scientific Reports
Scientific Reports, Vol 10, Iss 1, Pp 1-8 (2020)
Scientific Reports, Vol 10, Iss 1, Pp 1-8 (2020)
The effects of quercetin liposomes (Q-PEGL) on streptozotocin (STZ)-induced diabetic nephropathy (DN) was investigated in rats. Male Sprague Dawley rats were used to establish a STZ induced DN model. DN rats randomly received one of the following tre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e9bae84ab37bf0f8d2758811b56464df
http://europepmc.org/articles/PMC7016118
http://europepmc.org/articles/PMC7016118
Autor:
Shilin Cao, Yunwu Zhang, Yan Gu, Long Zhang, Sen Zhang, Jie Ma, Jing Zhu, Weifeng Sun, Ankang Li, Yanqin Zou, Zhuo Yang
Publikováno v:
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).
In this paper, the off-state avalanche stability is investigated and a time-dependent avalanche instability is observed at −40°C in SOI lateral IGBT. Combining results from measurements with those from TCAD simulations, the mechanism for avalanche
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::889213e3559f1f752fd4715854577832
https://doi.org/10.1109/ispsd.2019.8757611
https://doi.org/10.1109/ispsd.2019.8757611