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Zinc oxynitride (ZnO$_x$N$_y$) has recently emerged as a highly promising band gap-tunable semiconductor material for optoelectronic applications. In this study, a novel DC reactive sputtering protocol was developed to fabricate ZnO$_x$N$_y$ films wi
Externí odkaz:
http://arxiv.org/abs/2302.08201
Publikováno v:
Materials Research Express, Vol 11, Iss 1, p 016403 (2024)
Zinc oxynitride (ZnON) has recently emerged as a highly promising band gap-tunable semiconductor material for optoelectronic applications. In this study, a novel DC reactive sputtering protocol was developed to fabricate ZnON films with varying eleme
Externí odkaz:
https://doaj.org/article/0a546289854a4536b8d161b8ff92a619
Akademický článek
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Publikováno v:
2022 Third International Conference on Intelligent Computing Instrumentation and Control Technologies (ICICICT).
Autor:
Anjana J G, Prasanth M
Publikováno v:
2014 IEEE International Conference on Advanced Communications, Control and Computing Technologies.
Hierarchy of cache levels plays a major role for a faster memory access compared to direct main memory access for information recently used by a processor. In this paper, we propose a three level cache structure with additional decoder for much faste