Zobrazeno 1 - 10
of 53
pro vyhledávání: '"Anja Rosenbusch"'
Autor:
Chenhao Ge, Feng Q. Liu, Yufei Chen, Mengqi Ye, Anja Rosenbusch, Kun Xu, Yuchun Wang, Alain Duboust, Sherry Xia, Wen-Chiang Tu, Lakshmanan Karuppiah
Publikováno v:
ECS Transactions. 19:73-79
Since the CMP process depends on chemical and mechanical effects, the interaction with the physical and chemical properties of the GST alloy play very important roles during the CMP process. In this paper, the impact of the CMP process on a soft GST
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3b534f5fdd396e62795920508a0db07
https://doi.org/10.1149/1.3123776
https://doi.org/10.1149/1.3123776
Autor:
Anja Rosenbusch, Stuart T. Stanton
Publikováno v:
Microelectronic Engineering. 53:345-348
SCALPEL is a projection electron lithography technology with resolution limited by aberrations and electron-electron interactions, not diffraction. The main CD control issue is adequate dose latitude, for image blur approaching the feature size in a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae3398f6587951f58e127b4d8520cb7f
https://doi.org/10.1016/s0167-9317(00)00330-0
https://doi.org/10.1016/s0167-9317(00)00330-0
Autor:
Massimo Gentili, Ioannis Raptis, Zheng Cui, E. DiFabrizio, George P. Patsis, P. Prewett, G. Meneghini, Nikos Glezos, Anja Rosenbusch, B. Nowotny
Publikováno v:
Microelectronic Engineering. 46:379-382
A fast simulator for e-beam lithography called SELID, is presented. For the exposure part, an analytical solution based on the Boltzmann transport equation is used instead of Monte Carlo. All-important phenomena (backscattering, generation of seconda
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7727ca331e87584905a9e06e4aefefa
https://doi.org/10.1016/s0167-9317(99)00111-2
https://doi.org/10.1016/s0167-9317(99)00111-2
Publikováno v:
Microelectronic Engineering. :171-174
Multilayer substrates are of great importance for direct write applications. Recently, they are getting more and more importance in mask making as well, for example in the phase shift technology. In the case of direct writing, the substrate consists
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c43ed48cc71de93386b197ccb49f4df8
https://doi.org/10.1016/s0167-9317(98)00038-0
https://doi.org/10.1016/s0167-9317(98)00038-0
Publikováno v:
SPIE Proceedings.
The paper presents the results of a study to define a production-worthy inspection technique for subresolution solid and hollow scattering features used in 193-nm lithography. Masks are inspected using conventional high-NA and aerial-imaging-based ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d1792c44790cc75890c4cd072b29496
https://doi.org/10.1117/12.579749
https://doi.org/10.1117/12.579749
Publikováno v:
SPIE Proceedings.
The industry roadmap for IC manufacturing at design rules of 90nm and below foresees low k1-factor optical lithography at 193nm exposure wavelength. Aggressive model-based OPC are being used more and more frequently in order to achieve the extremely
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::537b0650587c6220d29952bd496a72a3
https://doi.org/10.1117/12.517815
https://doi.org/10.1117/12.517815
Autor:
Yuval Blumberg, Hong-Chang Hsieh, Anja Rosenbusch, Reuven Falah, Luke T. H. Hsu, Johnson Chang-Cheng Hung
Publikováno v:
SPIE Proceedings.
Inspection of aggressive OPC represents one of the major challenges for today's mask inspection methodologies. Systems are phased with high-density layouts, containing OPC features far below the resolution limit of conventional inspection systems. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28144cb711aa7a9267b01480fe9b4784
https://doi.org/10.1117/12.504058
https://doi.org/10.1117/12.504058
Publikováno v:
SPIE Proceedings.
The inspection of alternating phase shifting masks is still one of the major challenges in state-of-the-art mask making. Main issue is that phase defects cannot easily be identified by inspection systems using an inspection wavelength different form
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48ef2ca57b4687f90a41f69f1451a66f
https://doi.org/10.1117/12.504060
https://doi.org/10.1117/12.504060
Autor:
Shirley Hemar, Anja Rosenbusch
Publikováno v:
19th European Conference on Mask Technology for Integrated Circuits and Microcomponents.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::888d323e5d81e62ba0c1bc6f50111099
https://doi.org/10.1117/12.515103
https://doi.org/10.1117/12.515103