Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Anja Hornung"'
Publikováno v:
IEEE Transactions on Electron Devices. 62:36-43
We present experimental results on the realization of p-channel mode Ge(Sn) heterojunction band-to-band tunneling field effect transistors. We investigate the influence of three device parameters (drain doping, channel length, and tunnel barrier heig
Autor:
R. Koerner, Joerg Schulze, V. S. Senthil Srinivasan, Anja Hornung, Inga A. Fischer, Michael Oehme, Erlend Rolseth, Konrad Kostecki, Lion Augel
Publikováno v:
Semiconductor Science and Technology. 31:08LT01
As Ge1−x Sn x is being investigated for CMOS applications, obtaining contacts to n-type Ge1−x Sn x with low specific contact resistivity (ρ c) is a major concern. Here, we present results on specific contact resistivities of Sb doped n-type Ge1
Autor:
V S Senthil Srinivasan, Inga A Fischer, Lion Augel, Anja Hornung, Roman Koerner, Konrad Kostecki, Michael Oehme, Erlend Rolseth, Joerg Schulze
Publikováno v:
Semiconductor Science & Technology; Aug2016, Vol. 31 Issue 8, p1-1, 1p