Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Anja Dobrich"'
Autor:
Oliver Supplie, Masakazu Sugiyama, Peter Kleinschmidt, Boram Kim, Anja Dobrich, Thomas Hannappel, Agnieszka Paszuk, Sebastian Brückner, Manali Nandy, Yoshiaki Nakano
Publikováno v:
Applied Surface Science. 462:1002-1007
Low-defect III-V integration on Si(1 0 0) requires atomically well-ordered heterointerfaces. To this end, we study the interaction of As with Si(1 0 0) surfaces and the formation of dimerized Si(1 0 0):As surfaces in situ with reflection anisotropy s
Autor:
Erich Runge, Andreas Nägelein, Oliver Supplie, Anja Dobrich, Peter Kleinschmidt, Matthias Steidl, Oleksandr Romanyuk, Agnieszka Paszuk, Thomas Hannappel, Lars Winterfeld, Christian Koppka
Publikováno v:
Progress in Crystal Growth and Characterization of Materials. 64:103-132
The integration of III–V semiconductors with Si has been pursued for more than 25 years since it is strongly desired in various high-efficiency applications ranging from microelectronics to energy conversion. In the last decade, there have been tre
Autor:
Oliver Supplie, Sebastian Brückner, Peter Kleinschmidt, Marek Duda, Christian Koppka, Agnieszka Paszuk, Thomas Hannappel, Anja Dobrich
Publikováno v:
Journal of Crystal Growth. 464:14-19
III-V integration on active Si-bottom cells promises not only high-efficiency multi-junction solar cells but also lower production costs. In situ preparation of an adequate Si p-n junction in metalorganic chemical vapor deposition ambient is challeng
Autor:
Oliver Supplie, Thomas Hannappel, W. Zhao, Matthias Steidl, Sebastian Brückner, Agnieszka Paszuk, Anja Dobrich, Peter Kleinschmidt
Publikováno v:
Applied Surface Science. 392:1043-1048
For well-defined heteroepitaxial growth of III-V epilayers on Si(111) substrates the atomic structure of the silicon surface is an essential element. Here, we study the preparation of the Si(111) surface in H 2 -based chemical vapor ambient as well a
Publikováno v:
Solar Energy Materials and Solar Cells. 148:25-29
We investigate the Ga0.47In0.53As to InP interface with respect to their charge carrier lifetimes, interface recombination velocity and lateral interface homogeneity by using a time- and spatially resolved photoluminescence technique. Different prepa
Autor:
Anja Dobrich, Masakazu Sugiyama, Manali Nandy, Thomas Hannappel, Boram Kim, Agnieszka Paszuk, Yoshiaki Nakano, Oliver Supplie, Peter Kleinschmidt, Sebastian Brückner
Publikováno v:
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC).
In order to avoid formation of antiphase domains at the III-V/Si interface, which significantly can reduce the performance of photovoltaic devices, the Si(100) surface requires precise, double-atomic-step preparation. Here, we study the interaction o
Autor:
Oliver Supplie, Masakazu Sugiyama, Boram Kim, Sebastian Brückner, Anja Dobrich, Yoshiaki Nakano, Thomas Hannappel, Peter Kleinschmidt, Matthias M. May, Andreas Nägelein, Aznieszka Paszuk
Publikováno v:
2017 IEEE 44th Photovoltaic Specialist Conference (PVSC).
III–V integration on Si processed in MOCVD ambient which contains As opens up new opportunities for high-efficiency multi-junction solar cells. Here, we study the interaction of As with vicinal Si(100) surfaces, the formation of atomically well-ord
Wafer bonded four-junction GaInP/GaAs//GaInAsP/GaInAs concentrator solar cells with 44.7% efficiency
Autor:
Rainer Krause, Ulrich Fiedeler, T.N.D. Tibbits, A. Wekkeli, Thierry Salvetat, Michael Schachtner, Frank Dimroth, Paul Beutel, M. Piccin, Andreas W. Bett, Nicolas Blanc, Thomas Signamarcheix, Klaus Schwarzburg, Aurélie Tauzin, Eric Guiot, E. Oliva, Christian Karcher, Thomas Hannappel, Matthias Grave, Gerald Siefer, Anja Dobrich, Charlotte Drazek, Bruno Ghyselen
Publikováno v:
Progress in Photovoltaics: Research and Applications. 22:277-282
Triple-junction solar cells from III–V compound semiconductors have thus far delivered the highest solar-electric conversion efficiencies. Increasing the number of junctions generally offers the potential to reach even higher efficiencies, but mate
Autor:
Thomas Hannappel, Christian Höhn, Peter Kleinschmidt, Anja Dobrich, Sebastian Brückner, Henning Döscher
Publikováno v:
Journal of Crystal Growth. 315:10-15
The preparation of Si(1 0 0) surfaces in chemical vapor environments suitable for subsequent epitaxial III–V integration by chemical vapor deposition (CVD) involving metal-organic precursors was investigated by surface sensitive instruments accessi
Publikováno v:
physica status solidi (b). 255:1870117