Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Anita Pongracz"'
Autor:
Michael I. Current, Takuya Sakaguchi, Yoji Kawasaki, Viktor Samu, Anita Pongracz, Luca Sinko, Arpad Kerekes, Zsolt Durko
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 399-406 (2024)
This study uses photoluminescence (PL) and other carrier-recombination sensitive probes in combination with spreading resistance profiling (SRP), SIMS and IMSIL MC-calculations to monitor the ion range and damage levels in highly-channeled and random
Externí odkaz:
https://doaj.org/article/b5bbf6e15ee04f39adae11b654873533
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 20:221-223
Polarized Stress Imaging is an excellent method for monitoring bulk stress distribution in silicon wafers. In this study, the correlation of bulk Si stress and lithography defects are shown using Semilab’s Polarized Stress Imager (PSI) system. 300
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::188d71bd7d28c693e880cfadb11a29c7
https://doi.org/10.1109/tdmr.2020.2965220
https://doi.org/10.1109/tdmr.2020.2965220
Autor:
Viktor Samu, Ferenc Korsos, Edward D. Moore, J. Byrnes, Bálint Fodor, Leonard M. Rubin, Zoltan Kiss, Janos Szivos, Zsolt Zolnai, Anita Pongracz
Publikováno v:
2021 32nd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
In this study we investigate the effect of dose rate on defect formation due to high-dose, low-energy arsenic and boron implantation into n-type and p-type Si (100) samples. Besides room temperature (RT) micro-photoluminescence imaging (μ-PL) variou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59d4e777fe384328e803923a3f3bf0da
https://doi.org/10.1109/asmc51741.2021.9435658
https://doi.org/10.1109/asmc51741.2021.9435658
Autor:
Zs. Zolnai, Janos Szivos, J. Byrnes, O. Sepsi, F. Ujhelyi, Leonard M. Rubin, a. Kun, Anita Pongracz, Edward D. Moore, Gy. Nadudvari
Publikováno v:
2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Photo-modulated reflectance measurements provide a powerful, non-contact, non-destructive and inline-compatible method with low-cost operation for statistical process control of ion implantation steps on monitor and on product wafers. We present case
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b20eddc35e68b1b5f1cad8c9bf83c97
https://doi.org/10.1109/asmc49169.2020.9185326
https://doi.org/10.1109/asmc49169.2020.9185326
Autor:
Janos Szivos, a. Kun, Leonard M. Rubin, B. Bartal, A. Bolcskei-Molnar, Anita Pongracz, Bálint Fodor, J. Byrnes, Gy. Nadudvari, F. Ujhelyi
Publikováno v:
2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Photo-modulated Reflectivity Measurement (PMR) is an excellent technology for ion implantation dose and tilt angle monitoring of as-implanted pre-annealed production wafers. The SEMILAB PMR-3000 is a unit for in-line monitoring of ion implantation pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ce592b4bb109cf1683b4a95fab87d3f
https://doi.org/10.1109/asmc.2019.8791776
https://doi.org/10.1109/asmc.2019.8791776
Autor:
Zoltan Kiss, M. Nagy, L. Roszol, B. Greenwood, J. Byrnes, K. Truong, Ashley Lee, Anita Pongracz, J.P. Gambino, L. Jastrzebski, J. Kimball, G. Molnar, S. Sridaran, Santosh Menon, Gyorgy Nadudvari
Publikováno v:
2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
A key part of 180nm Bipolar-CMOS-DMOS (BCD) technology is the use of PNP bipolar devices with high beta. Macro and Micro Photoluminescence Imaging (MacroPL, μPL) uses excitation of charge carriers in semiconductor by high intensity illumination, fol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6f65fe2ed4199d18ea4eb06c8601f32
https://doi.org/10.1109/asmc.2019.8791817
https://doi.org/10.1109/asmc.2019.8791817
Autor:
Janos Szivos, Tamas Szarvas, Adam Kun, J. Byrnes, Gyorgy Nadudvari, Reka Piros, Orsolya Almasi, Anita Pongracz, Eniko Kis, Leonard M. Rubin, Szabolcs Spindler, Ferenc Ujhelyi
Publikováno v:
2018 22nd International Conference on Ion Implantation Technology (IIT).
Photo-modulated Reflectivity Measurement (PMR) is an excellent technology for implantation dose and tilt monitoring of as-implanted pre-annealed production wafers. SEMILAB PMR-3000 is an in-line monitoring unit for ion implantation monitoring use pri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6570fdadce5744f8528175ea6243bd00
https://doi.org/10.1109/iit.2018.8807949
https://doi.org/10.1109/iit.2018.8807949
Autor:
Gyorgy Nadudvari, Anita Pongracz, I. Mica, S. Grasso, Maria Luisa Polignano, A. Galbiati, Davide Codegoni, Peter Basa, Zoltan Kiss
Publikováno v:
2018 22nd International Conference on Ion Implantation Technology (IIT).
In this work, we review some techniques used for the characterization of ion implanted layers, with the aim to identify the best approach in various experimental conditions.With regard to dopant profiles, Secondary Ion Mass Spectrometry (SIMS) or Tim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d49988613c698b675b727b6bf3dc9ee
https://doi.org/10.1109/iit.2018.8807895
https://doi.org/10.1109/iit.2018.8807895
Autor:
Gábor Battistig, Anita Pongracz, Jean Jacques Ganem, Marie D'Angelo, Isabelle Trimaille, Catherine Deville Cavellin, Ian Vickridge
Publikováno v:
Journal of Applied Physics
Journal of Applied Physics, 2009, 105 (3), pp.033501. ⟨10.1063/1.3072679⟩
Journal of Applied Physics, 2009, 105 (3), pp.033501. ⟨10.1063/1.3072679⟩
International audience; The mechanisms of oxygen exchange between thermal silicon oxide films and carbon monoxide have been studied using O-18 as an isotopic tracer. SiO2 layers of natural isotopic composition, obtained by thermal oxidation of silico
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0eb517e4a61fc94086dd1aa5cfdd365f
https://doi.org/10.1063/1.3072679
https://doi.org/10.1063/1.3072679
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