Zobrazeno 1 - 10
of 169
pro vyhledávání: '"Anita Lloyd-Spetz"'
Publikováno v:
Proceedings, Vol 56, Iss 1, p 41 (2021)
In order to investigate the necessary device improvements for high-temperature CO sensing with SiC metal insulator semiconductor field effect transistor (MISFET)-based chemical gas sensors, devices employing, as the gas-sensitive gate contact, a film
Externí odkaz:
https://doaj.org/article/2b5194aa09db4351a2998dbb5a2954ee
Autor:
Niina Halonen, Joni Kilpijärvi, Maciej Sobocinski, Timir Datta-Chaudhuri, Antti Hassinen, Someshekar B. Prakash, Peter Möller, Pamela Abshire, Sakari Kellokumpu, Anita Lloyd Spetz
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 7, Iss 1, Pp 1871-1877 (2016)
Cell viability monitoring is an important part of biosafety evaluation for the detection of toxic effects on cells caused by nanomaterials, preferably by label-free, noninvasive, fast, and cost effective methods. These requirements can be met by moni
Externí odkaz:
https://doaj.org/article/a565e71df26846ac800fc374942d7793
Autor:
Ivan Shtepliuk, Jens Eriksson, Volodymyr Khranovskyy, Tihomir Iakimov, Anita Lloyd Spetz, Rositsa Yakimova
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 7, Iss 1, Pp 1800-1814 (2016)
A vertical diode structure comprising homogeneous monolayer epitaxial graphene on silicon carbide is fabricated by thermal decomposition of a Si-face 4H-SiC wafer in argon atmosphere. Current–voltage characteristics of the graphene/SiC Schottky jun
Externí odkaz:
https://doaj.org/article/f2c25e2d7d094f46958fda00e9a3e89e
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 8, Iss 1, Pp 2015-2016 (2017)
Externí odkaz:
https://doaj.org/article/339ea7ed8a7b4e648e3cbc6c3c2f854b
Autor:
Manuel Bastuck, Donatella Puglisi, Anita Lloyd Spetz, Andreas Schütze, Tilman Sauerwald, Mike Andersson
Publikováno v:
Proceedings, Vol 2, Iss 13, p 999 (2018)
Static and dynamic responses of a silicon carbide field-effect transistor gas sensor have been investigated at two different gate biases in several test gases. Especially the dynamic effects are gas dependent and can be used for gas identification. T
Externí odkaz:
https://doaj.org/article/d2bb9f1ac22e4bedb47bf8ca293ae37d
Publikováno v:
Proceedings, Vol 2, Iss 13, p 1068 (2018)
The performance of Silicon Carbide based field effect gas sensor devices, modified to enable long-term reliable operation with improved sensitivity to e.g., NH3 and CO at relevant temperatures for exhaust/flue gas emissions monitoring and control of
Externí odkaz:
https://doaj.org/article/94a2e914620940ffa7accc844fef3e70
Autor:
Joni Kilpijärvi, Niina Halonen, Maciej Sobocinski, Antti Hassinen, Bathiya Senevirathna, Kajsa Uvdal, Pamela Abshire, Elisabeth Smela, Sakari Kellokumpu, Jari Juuti, Anita Lloyd Spetz
Publikováno v:
Sensors, Vol 18, Iss 10, p 3346 (2018)
A complementary metal-oxide-semiconductor (CMOS) chip biosensor was developed for cell viability monitoring based on an array of capacitance sensors utilizing a ring oscillator. The chip was packaged in a low temperature co-fired ceramic (LTCC) modul
Externí odkaz:
https://doaj.org/article/cadb58a2ca5e4022ade4fff4af58e791
Publikováno v:
Proceedings, Vol 56, Iss 41, p 41 (2020)
In order to investigate the necessary device improvements for high-temperature CO sensing with SiC metal insulator semiconductor field effect transistor (MISFET)-based chemical gas sensors, devices employing, as the gas-sensitive gate contact, a film
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::203d5bc8f397dd57147efb824dca7bb9
https://www.mdpi.com/2504-3900/56/1/41
https://www.mdpi.com/2504-3900/56/1/41
The introduction of silicon carbide as the semiconductor in gas-sensitive field effect devices has disruptively improved this sensor platform extending the operation temperature to more than 600 °C ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd82e29145485150bcfc20c90caaeecb
https://doi.org/10.1016/b978-0-08-102559-8.00010-0
https://doi.org/10.1016/b978-0-08-102559-8.00010-0
Autor:
Andrey Shchukarev, Lede Xian, José J. Baldoví, Anita Lloyd Spetz, Heli Jantunen, Krisztian Kordas, Alejandro Pérez Paz, Georgies Alene Asres, Topias Järvinen, Aron Dombovari, Gabriela S. Lorite, Melinda Mohl, Jyri-Pekka Mikkola, Angel Rubio
Publikováno v:
Nano Research
Digital.CSIC: Repositorio Institucional del CSIC
Consejo Superior de Investigaciones Científicas (CSIC)
Digital.CSIC. Repositorio Institucional del CSIC
instname
Digital.CSIC: Repositorio Institucional del CSIC
Consejo Superior de Investigaciones Científicas (CSIC)
Digital.CSIC. Repositorio Institucional del CSIC
instname
Owing to their higher intrinsic electrical conductivity and chemical stability with respect to their oxide counterparts, nanostructured metal sulfides are expected to revive materials for resistive chemical sensor applications. Herein, we explore the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::089bffbe9bbdcbd24a3293a147e11e36
https://doi.org/10.1007/s12274-018-2009-9
https://doi.org/10.1007/s12274-018-2009-9