Zobrazeno 1 - 10
of 1 345
pro vyhledávání: '"Anisotropic etching"'
Publikováno v:
ChemPhysMater, Vol 3, Iss 4, Pp 341-356 (2024)
Two-dimensional (2D) layered materials with unique physicochemical properties, such as graphene, transition metal dichalcogenides, and hexagonal boron nitride, have shown considerable potential in the electrical and electronics industries as well as
Externí odkaz:
https://doaj.org/article/74733e61e3c4424f815e15a863ba51e0
Publikováno v:
Science and Technology of Advanced Materials, Vol 25, Iss 1 (2024)
We demonstrate a facile and safe anisotropic gas etching technique for β-Ga2O3 under atmospheric pressure using forming gas, a H2/N2 gas mixture containing 3.96 vol% H2. This etching gas, being neither explosive nor toxic, can be safely exhausted in
Externí odkaz:
https://doaj.org/article/3c8b0a44a789448bbacf6ff0bf883698
Publikováno v:
Физико-химические аспекты изучения кластеров, наноструктур и наноматериалов, Iss 15, Pp 629-636 (2023)
This work is devoted to the technological features of creating an array of pyroelectric nanoparticles placed in the pores of a silicon oxide membrane, ensuring their thermal insulation both from each other and from the supporting substrate. Mechanism
Externí odkaz:
https://doaj.org/article/93a4e5eb7d0e4ecb8eb35481d9c31426
Autor:
Yuqing Li, Hitoshi Sai, Calum McDonald, Zhihao Xu, Yasuyoshi Kurokawa, Noritaka Usami, Takuya Matsui
Publikováno v:
Advanced Materials Interfaces, Vol 10, Iss 35, Pp n/a-n/a (2023)
Abstract A monolithic perovskite/silicon tandem solar cell architecture is employed to surpass the single‐junction efficiency limit. Recently, there is an increasing need for the double‐sided textures in the Si bottom cell to be compatible with t
Externí odkaz:
https://doaj.org/article/b271effdbfc44467a4d3fc7eaf8dd7e5
Autor:
Andrey Miakonkikh, Vitaly Kuzmenko
Publikováno v:
Nanomaterials, Vol 14, Iss 11, p 945 (2024)
This article discusses a method for forming black silicon using plasma etching at a sample temperature range from −20 °C to +20 °C in a mixture of oxygen and sulfur hexafluoride. The surface morphology of the resulting structures, the autocorrela
Externí odkaz:
https://doaj.org/article/a54ff257383140a29f339bae5ff52891
Publikováno v:
Micro and Nano Systems Letters, Vol 10, Iss 1, Pp 1-10 (2022)
Abstract Silicon bulk micromachining is extensively employed method in microelectromechanical systems (MEMS) for the formation of freestanding (e.g., cantilevers) and fixed (e.g., cavities) microstructures. Wet anisotropic etching is a popular techni
Externí odkaz:
https://doaj.org/article/e4324c96c98f4ea5b272ae5dd2cd496d
Publikováno v:
Cailiao gongcheng, Vol 50, Iss 11, Pp 173-181 (2022)
The work aims to explore the anisotropic etching of synthetic diamond single crystal by rare earth oxide. Under the protection of nitrogen, synthetic diamond single crystals were etched by Pr6O11 powder at 750-950℃. The surface morphology, phase co
Externí odkaz:
https://doaj.org/article/525101963ef9438883fe62a4eefa4476
Akademický článek
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Akademický článek
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Autor:
Prem Pal, Veerla Swarnalatha, Avvaru Venkata Narasimha Rao, Ashok Kumar Pandey, Hiroshi Tanaka, Kazuo Sato
Publikováno v:
Micro and Nano Systems Letters, Vol 9, Iss 1, Pp 1-59 (2021)
Abstract Wet anisotropic etching is extensively employed in silicon bulk micromachining to fabricate microstructures for various applications in the field of microelectromechanical systems (MEMS). In addition, it is most widely used for surface textu
Externí odkaz:
https://doaj.org/article/76503e6a915d4cbfb8a3112cc69b1dea