Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Anisa Myzaferi"'
Autor:
Asad J. Mughal, Daniel A. Cohen, Anisa Myzaferi, Shuji Nakamura, Steven P. DenBaars, James S. Speck, Robert M. Farrell
Publikováno v:
Optics express. 26(10)
We report continuous-wave (CW) blue semipolar (202¯1) III-nitride laser diodes (LDs) that incorporate limited area epitaxy (LAE) n-AlGaN bottom cladding with thin p-GaN and ZnO top cladding layers. LAE mitigates LD design limitations that arise from
Autor:
Sang Ho Oh, Steven P. DenBaars, Asad J. Mughal, James S. Speck, Anisa Myzaferi, Shuji Nakamura
Publikováno v:
Electronics Letters. 52:304-306
The performance of LEDs with Ga-doped ZnO (Ga:ZnO) and Sn-doped In2O3 (ITO) current-spreading layers (CSLs) has been evaluated at high injection current densities. LEDs with electron beam-hydrothermally deposited Ga:ZnO transparent CSLs showed improv
Autor:
Steven P. DenBaars, Shuji Nakamura, Anisa Myzaferi, Asad J. Mughal, Sang Ho Oh, James S. Speck, Benjamin Carberry
Publikováno v:
physica status solidi (a). 214:1600941
This work was funded in part by the Solid State Lighting Program (SSLP), a collaboration between King Abdulaziz City for Science and Technology (KACST), King Abdullah University of Science and Technology (KAUST), and University of California, Santa B
Autor:
Anisa Myzaferi, Arthur H. Reading, James S. Speck, Steven P. DenBaars, Robert M. Farrell, Shuji Nakamura, Daniel A. Cohen
Publikováno v:
Applied Physics Letters. 109:061109
The bottom cladding design of semipolar III-nitride laser diodes is limited by stress relaxation via misfit dislocations that form via the glide of pre-existing threading dislocations (TDs), whereas the top cladding is limited by the growth time and