Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Aniruddh Bahadur Yadav"'
Autor:
Aniruddh Bahadur Yadav, N. V. L. Narasimha Murty, Bandaru Lasya, Sreenivasulu Mamilla, Basavaraj S. Sannakashappanavar
Publikováno v:
Journal of Electronic Materials. 52:3228-3241
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17ccacb45a1b18d1b6a31dfe1724053c
https://doi.org/10.1007/s11664-023-10297-x
https://doi.org/10.1007/s11664-023-10297-x
Autor:
Harsha Sai Kalyanapu, Nanda Gopal Vemuri, Venkata Pavan Sai Hemanth Rayapati, Aniruddh Bahadur Yadav, Gnana Prasanna Yella
Publikováno v:
2023 2nd International Conference for Innovation in Technology (INOCON).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64c169f29a66826ac42a6d2e475cd6ef
https://doi.org/10.1109/inocon57975.2023.10101294
https://doi.org/10.1109/inocon57975.2023.10101294
Publikováno v:
Micro and Nanostructures. 179:207581
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7b04c863cdf7b58991cca2ef792a8d5
https://doi.org/10.1016/j.micrna.2023.207581
https://doi.org/10.1016/j.micrna.2023.207581
Autor:
Kunal Singh, Aniruddh Bahadur Yadav, Vinod Kumar, Basavaraj S. Sannakashappanavar, N. V. L. Narasimha Murty
Publikováno v:
Silicon. 14:1531-1536
A high performance electronic device can be fabricated by achieving a high quality metal thin film Ohmic contact to intrinsic ZnO. In the present work, the low specific contact resistance Cr/Au metallization scheme deposited on n-type intrinsic 100 n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::363f1d94f709fd357779b6461296c863
https://doi.org/10.1007/s12633-021-00949-0
https://doi.org/10.1007/s12633-021-00949-0
Autor:
RadhaKrishna K Bhagavan NagaSai, B Suvarna Pooja, K Meher Preethi, R Sahithi Arjun, Aniruddh Bahadur Yadav
Publikováno v:
2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ff858a860cb540978d3a42e2a5ad95b
https://doi.org/10.1109/5nano53044.2022.9828997
https://doi.org/10.1109/5nano53044.2022.9828997
Autor:
C. R. Byrareddy, N. V. L. Narasimha Murty, Aniruddh Bahadur Yadav, Basavaraj S. Sannakashappanavar
Publikováno v:
Journal of Electronic Materials. 49:5272-5280
The present study illustrates the fabrication of ZnO ultra-thin film (25 nm)-based bottom gate phototransistors using RF sputtering and thermal evaporation on SiO2/Si substrate for UV detection. According to the literature, phototransistors have the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b82b62ab5c393476d67ebadd5ed53d48
https://doi.org/10.1007/s11664-020-08280-x
https://doi.org/10.1007/s11664-020-08280-x
Publikováno v:
Thin Solid Films. 685:343-352
Here we present the effect of the precursor chemistry on the properties of ZnO nanorods prepared by using the hydrothermal method. The nanorods were grown over RF-sputtered 50 nm ZnO seed layers on integrated circuits compatible highly lattice mismat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a7948adc853225027948688f5939afc
https://doi.org/10.1016/j.tsf.2019.06.042
https://doi.org/10.1016/j.tsf.2019.06.042
Autor:
Sublania Harish Kumar, Satyabrata Jit, Aniruddh Bahadur Yadav, Pramod Kumar Tiwari, Kunal Singh, Sarvesh Dubey
Publikováno v:
Journal of Electronic Materials. 48:6366-6371
In this work, a recent device structure called double-gate (DG) nanoscale RingFET has been investigated by developing a computationally efficient foremost semianalytical threshold voltage model. Poisson’s equation has been solved using parabolic ap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4fb2f368366310a065ba56e0ac592c1
https://doi.org/10.1007/s11664-019-07411-3
https://doi.org/10.1007/s11664-019-07411-3
Autor:
Nandini A. Pattanashetti, Kunal Singh, C. R. Byrareddy, Basavaraj S. Sannakashappanavar, Aniruddh Bahadur Yadav
Publikováno v:
Journal of Nanoelectronics and Optoelectronics. 14:964-971
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9c1e6a1a5473e976cf3c1006dc20e68
https://doi.org/10.1166/jno.2019.2599
https://doi.org/10.1166/jno.2019.2599
Publikováno v:
Materials Today Communications. 31:103751
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::551c92d3e683b81b27dca38fa6b22c37
https://doi.org/10.1016/j.mtcomm.2022.103751
https://doi.org/10.1016/j.mtcomm.2022.103751