Zobrazeno 1 - 10
of 34
pro vyhledávání: '"Anindita Mondal"'
Autor:
Anindita Mondal, Ram N Das, Uttara Chatterjee, Arijit Majumdar, Moumita Sengupta, Swagata Bhattacharyya, Ruchirendu Sarkar
Publikováno v:
Indian Journal of Pathology and Microbiology, Vol 65, Iss 2, Pp 406-409 (2022)
The most common cause of granulomatous lymphadenitis in countries like ours is mycobactrium tuberculosis followed by atypical mycobacterial infection, fungal infections, parasitic infection, cat scratch disease, lymphogranuloma venereum (inguinal lym
Externí odkaz:
https://doaj.org/article/8608a8ed0baa4a80b3896dc1b8a41b4b
Autor:
Subhajit Saha, Anindita Mondal
Publikováno v:
European Physical Journal C: Particles and Fields, Vol 77, Iss 3, Pp 1-6 (2017)
Abstract A rigorous thermodynamic analysis has been done as regards the apparent horizon of a spatially flat Friedmann–Lemaitre–Robertson–Walker universe for the gravitationally induced particle creation scenario with constant specific entropy
Externí odkaz:
https://doaj.org/article/a76f94e673614f71879f735e25fe82c9
Autor:
Subhajit Saha, Anindita Mondal
Publikováno v:
European Physical Journal C: Particles and Fields, Vol 78, Iss 4, Pp 1-1 (2018)
We would like to rectify an error regarding the validity of the first law of thermodynamics (FLT) on the apparent horizon of a spatially flat Friedmann–Lemaitre–Robertson–Walker (FLRW) universe for the gravitationally induced particle creation
Externí odkaz:
https://doaj.org/article/a597d5dc43c2460aa2184ce76ddadb45
Autor:
Udayaditya Mukhopadhyaya, Chandana Chakraborti, Anindita Mondal, Ujjal Pattyanayak, Rajesh Kumar Agarwal, Partha Tripathi
Publikováno v:
The Pan African Medical Journal, Vol 17, Iss 135 (2014)
We report a 13-year-old child with Noonan Syndrome who developed spontaneous dislocation of the crystalline lens in anterior chamber leading to pupillary block glaucoma in the left eye and subluxation of lens in right eye. Intracapsular extraction of
Externí odkaz:
https://doaj.org/article/f32cfaff9a86415491f31def22c621c5
Autor:
Pankaj Singh Chauhan, Sumana Kumar, Anindita Mondal, Pragya Sharma, Mihir N. Parekh, Vinod Panwar, Apparao M. Rao, Abha Misra
Publikováno v:
Journal of Materials Chemistry A. 11:95-107
Photo-chargeable supercapacitor from a ZnO and V2O5 layered structure under UV illumination.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8401514c3110a6a075231aec52bdc2b9
https://doi.org/10.1039/d2ta06790k
https://doi.org/10.1039/d2ta06790k
Publikováno v:
Silicon. 14:3383-3393
Comparative analysis of a Symmetric Heterojunction Underlap Double Gate (U-DG) GaN/AlGaN Metal Oxide Semiconductor High Electron Mobility Transistor (MOS-HEMT) on varying the effective capacitance by using different oxide materials on source and drai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c72c6d9356be2d2fe628ef5ab3d57c03
https://doi.org/10.1007/s12633-021-01112-5
https://doi.org/10.1007/s12633-021-01112-5
Publikováno v:
Toxicology Mechanisms and Methods. 30:257-265
Monte Carlo based method by using either SMILES based or combination of SMILES and Graph-based descriptors is an important strategy to build the QSAR/QSTR model for prediction of different biologic...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::509bc40f3e378808e34a92e36177611a
https://doi.org/10.1080/15376516.2019.1709238
https://doi.org/10.1080/15376516.2019.1709238
Autor:
Navid Shaghaghi, Maria Joseph Israel, Smita Ghosh, Saikat Mondal, Anindita Mondal Abhishek Biswas
Publikováno v:
2021 1st Conference on Online Teaching for Mobile Education (OT4ME).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f973116061c133df1aac7e85d35dc8ff
https://doi.org/10.1109/ot4me53559.2021.9638822
https://doi.org/10.1109/ot4me53559.2021.9638822
Using observed and published spectra in the optical region, we have studied a handful of novae and symbiotic stars that show novae-like variability in the quiescence phase. We present results for the novae T Coronae Borealis, GK Persei, RS Ophiuchi,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9cbd7d406eb43b2d471cba74e58b7b9e
http://arxiv.org/abs/2007.02525
http://arxiv.org/abs/2007.02525
Publikováno v:
2020 IEEE Calcutta Conference (CALCON).
A Symmetric Heterojunction Underlap Double Gate (U-DG) GaN/AlGaN Metal Oxide Semiconductor High Electron Mobility Transistor (MOS-HEMT) having negatively doped AlGaN region and AlGaN spacer has been studied for varying values of doped AlGaN width in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97e767ba662ab82dec6da5f38bb1deee
https://doi.org/10.1109/calcon49167.2020.9106535
https://doi.org/10.1109/calcon49167.2020.9106535